Verification of threshold voltage variation of scaled transistors with ultralarge-scale device matrix array test element group

Japanese Journal of Applied Physics

Volumn 48, Issue 12, 2009, Pages

  Tsunomura, Takaaki ^a   Nishida, Akio ^a   Hiramoto, Toshiro ^a,b  

^a Research Dept 2   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

65NM TECHNOLOGY; MATRIX ARRAYS; MEASUREMENT PROGRAMS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; RANDOM COMPONENTS; RAPID MEASUREMENT; SIGNAL INPUT; TEST ELEMENT GROUPS; THRESHOLD VOLTAGE VARIATION;

ELECTRONIC EQUIPMENT TESTING; MOSFET DEVICES; NANOTECHNOLOGY; NORMAL DISTRIBUTION; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 75149159985     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.124505     Document Type: Article

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