Dopant distribution in gate electrode of n - And p -type metal-oxide-semiconductor field effect transistor by laser-assisted atom probe

Applied Physics Letters

Volumn 95, Issue 4, 2009, Pages

  Inoue, K ^a,c   Yano, F ^b   Nishida, A ^b   Takamizawa, H ^a   Tsunomura, T ^b   Nagai, Y ^a   Hasegawa, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^c KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM PROBE; B ATOMS; DOPANT DISTRIBUTION; GATE ELECTRODES; GATE OXIDE; LASER-ASSISTED; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; NMOSFET; P-TYPE; PMOSFET; POLYCRYSTALLINE-SI; THREE-DIMENSIONAL ATOM PROBE;

ATOMS; CRYSTAL ATOMIC STRUCTURE; DIELECTRIC DEVICES; DIFFUSION IN SOLIDS; ELECTRIC BREAKDOWN; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MOS DEVICES; POLYSILICON; PROBES; SEMICONDUCTING SILICON; SEMICONDUCTOR LASERS; THREE DIMENSIONAL;

MOSFET DEVICES;

EID: 68249107039     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3186788     Document Type: Article

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