Properties of atomic layer deposited HfO 2 films on Ge substrates depending on process temperatures

Journal of the Electrochemical Society

Volumn 159, Issue 4, 2012, Pages

  Jung, Hyung Suk ^a   Kim, Hyo Kyeom ^a   Yu, Il Hyuk ^a   Lee, Sang Young ^a   Lee, Joohwi ^a   Park, Jinho ^a   Jang, Jae Hyuck ^a   Jeon, Sang Ho ^a   Chung, Yoon Jang ^a   Cho, Deok Yong ^a   Lee, Nae In ^b   Park, Tae Joo ^c   Choi, Jung Hae ^d   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Hanyang University   (South Korea)

^d Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; C-V HYSTERESIS; CAPACITANCE VOLTAGE; CRYSTALLINE PHASIS; DEGREE OF INTERMIXING; DEPOSITION TEMPERATURES; EQUIVALENT OXIDE THICKNESS; GE SUBSTRATES; LOW DENSITY; LOW TEMPERATURES; MONOCLINIC PHASE; POST DEPOSITION ANNEALING; PROCESS TEMPERATURE; TETRAGONAL PHASE;

ATOMIC LAYER DEPOSITION; ELECTRIC PROPERTIES; GERMANIUM; SUBSTRATES;

HAFNIUM OXIDES;

EID: 84863151909     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.014204jes     Document Type: Article

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