Combined experimental and theoretical study of thin hafnia films

Physical Review B - Condensed Matter and Materials Physics

Volumn 78, Issue 24, 2008, Pages

  Luo, X ^a   Demkov, A A ^a   Triyoso, D ^b   Fejes, P ^b   Gregory, R ^b   Zollner, S ^b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 58149173953     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.78.245314     Document Type: Article

References (39)

1. 2007 International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, 2007.
2. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001). 10.1063/1.1361065
3. M. Copel, M. Gribelyuk, and E. Gusev, Appl. Phys. Lett. 76, 436 (2000). 10.1063/1.125779
4. M. Gutowski, J. E. Jaffe, C. Liu, M. Stoker, R. I. Hegde, R. S. Rai, and P. J. Tobin, Appl. Phys. Lett. 80, 1897 (2002). 10.1063/1.1458692
5. X. Zhao and D. Vanderbilt, Phys. Rev. B 65, 233106 (2002). 10.1103/PhysRevB.65.233106
6. M. Ritala, M. Leskela, L. Niinisto, T. Prohaska, G. Friedbacher, and M. Grasserbauer, Thin Solid Films 250, 72 (1994). 10.1016/0040-6090(94)90168-6
7. S. V. Ushakov, A. Navrotsky, Y. Yang, S. Stemmer, K. Kukli, M. Ritala, M. A. Leskelä, P. Fejes, A. A. Demkov, C. Wang, B. Y. Nguyen, D. Triyoso, and P. Tobin, Phys. Status Solidi B 241, 2268 (2004). 10.1002/pssb.200404935
8. Q. Fang, J.-Y. Zhang, Z. Wang, M. Modreanu, B. J. O'Sullivan, P. K. Hurley, T. L. Leedham, D. Hywel, M. A. Audier, C. Jimenez, J.-P. Senateur, and I. W. Boyd, Thin Solid Films 453-454, 203 (2004). 10.1016/j.tsf.2003.11.186
9. M. Y. Ho, H. Gong, G. D. Wilk, B. W. Busch, M. L. Green, P. M. Voyles, D. A. Muller, M. Bude, W. H. Lin, A. See, M. E. Loomans, S. K. Lahiri, and P. T. Räisänen, J. Appl. Phys. 93, 1477 (2003). 10.1063/1.1534381
10. D. Triyoso, R. Liu, D. Roan, M. Ramon, N. V. Edwards, R. Gregory, D. Werho, J. Kulik, G. Tam, E. Irwin, X. D. Wang, L. B. La, C. Hobbs, R. Garcia, J. Baker, B. E. White, and P. Tobin, J. Electrochem. Soc. 151, F220 (2004). 10.1149/1.1784821
11. J. Aarik, A. Aidla, H. Mändar, V. Sammelselg, and T. Uustare, J. Cryst. Growth 220, 105 (2000). 10.1016/S0022-0248(00)00831-9
12. I. M. Iskandarova, A. A. Knizhnik, E. A. Rykova, A. A. Bagatur'yants, B. V. Potaptkin, and A. A. Korkin, Microelectron. Eng. 69, 587 (2003). 10.1016/S0167-9317(03)00350-2
13. A. B. Mukhopadhyay, J. F. Sanz, and C. B. Musgrave, Phys. Rev. B 73, 115330 (2006). 10.1103/PhysRevB.73.115330
14. D. H. Triyoso, R. I. Hegde, J. Grant, P. Fejes, R. Liu, D. Roan, M. Ramon, D. Werho, R. Rai, L. B. La, J. Baker, C. Garza, T. Guenther, B. E. White, Jr., and P. J. Tobin, J. Vac. Sci. Technol. B 22, 2121 (2004). 10.1116/1.1773840
15. M. Ritala and M. Leskela, in Handbook of Thin Films Materials, edited by, H. S. Nalwa, (Academic, Cambridge, 2001), p. 103.
16. M. Ritala, M. Leskela, L. Niinisto, T. Prohaska, G. Friedbacher, and M. Grasserbauer, Thin Solid Films 250, 72 (1994). 10.1016/0040-6090(94)90168-6
17. H. Kim, P. McIntrye, and K. Saraswat, Appl. Phys. Lett. 82, 106 (2003). 10.1063/1.1533117
18. G. Scarel, C. Wiemer, S. Ferrari, G. Tallarida, and M. Fanciulli, Proc. Est. Acad. Sci., Phys., Math. 52, 308 (2003).
19. H.-H Tseng, M. E. Ramon, L. Hebert, P. J. Tobin, D. Triyoso, J. M. Grant, Z. X. Jiang, D. Roan, S. B. Samavedam, D. C. Gilmer, S. Kalpat, C. Hobbs, W. J. Taylor, O. Adetutu, and B. E. White, Tech. Dig. - Int. Electron Devices Meet. 2003, 4.1.1.
20. JCPDF Card No. 08-0342.
21. JCPDF Card No. 06-0318.
22. J. Wang, H. P. Li, and R. Stevens, J. Mater. Sci. 27, 5397 (1992). 10.1007/BF00541601
23. G. Kresse and J. Furthmuller, Phys. Rev. B 54, 11169 (1996). 10.1103/PhysRevB.54.11169
24. J. P. Perdew, Physica B 172, 1 (1991). 10.1016/0921-4526(91)90409-8
25. J. P. Perdew, Phys. Lett. A 165, 79 (1992). 10.1016/0375-9601(92)91058-Y
26. D. Vanderbilt, Phys. Rev. B 41, 7892 (1990). 10.1103/PhysRevB.41.7892
27. A. A. Demkov, Phys. Status Solidi B 226, 57 (2001). 10.1002/1521- 3951(200107)226:1<57::AID-PSSB57>3.0.CO;2-L
28. J. Wang, H. P. Li, and R. Stevens, J. Mater. Sci. 27, 5397 (1992). 10.1007/BF00541601
29. J. Adam and M. D. Rodgers, Acta Crystallogr. 12, 951 (1959). 10.1107/S0365110X59002742
30. J. Padilla and D. Vanderbilt, Surf. Sci. 418, 64 (1998). 10.1016/S0039-6028(98)00670-0
31. E. Chagarov, A. A. Demkov, and J. B. Adams, Phys. Rev. B 71, 075417 (2005). 10.1103/PhysRevB.71.075417
32. A. A. Demkov, L. R. C. Fonseca, E. Verret, J. Tomfohr, and O. F. Sankey, Phys. Rev. B 71, 195306 (2005). 10.1103/PhysRevB.71.195306
33. R. Q. Long, Y. P. Huang, and H. L. Wan, J. Raman Spectrosc. 28, 29 (1997). 10.1002/(SICI)1097-4555(199701)28:1<29::AID-JRS59>3.0.CO;2-G
34. V. V. Pushkarev, V. I. Kovalchuk, and J. L. d'Itri, J. Phys. Chem. B 108, 5341 (2004). 10.1021/jp0311254
35. C. Li, K. Domen, K. Maruya, and T. Onishi, J. Am. Chem. Soc. 111, 7683 (1989). 10.1021/ja00202a003
36. A. Christensen and E. A. Carter, Phys. Rev. B 58, 8050 (1998). 10.1103/PhysRevB.58.8050
37. O. Sharia (private communication).
38. E. Bersch, S. Rangan, R. A. Bartynski, E. Garfunkel, and E. Vescovo, Phys. Rev. B 78, 085114 (2008). 10.1103/PhysRevB.78.085114
39. G. Cerrato, S. Bordiga, S. Barbera, and C. Morterra, Surf. Sci. 377-379, 50 (1997). 10.1016/S0039-6028(96)01348-9