Impacts of Zr composition in Hf1-xZrxOy gate dielectrics on their crystallization behavior and bias-temperature- instability characteristics

IEEE Transactions on Electron Devices

Volumn 58, Issue 7, 2011, Pages 2094-2103

  Jung, Hyung Suk ^a   Lee, So Ah ^a   Rha, Sang Ho ^a   Lee, Sang Young ^a   Kim, Hyo Kyeom ^a   Kim, Do Hyun ^a   Oh, Kyu Hwan ^a   Park, Jung Min ^b   Kim, Weon Hong ^b   Song, Min Woo ^b   Lee, Nae In ^b   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Bias temperature instability (BTI); hafnium oxide HfO2; high gate dielectrics; zirconium oxide ZrO2

Indexed keywords

ATOMIC LAYER DEPOSITED; BIAS TEMPERATURE INSTABILITY; CRYSTALLINE PHASIS; CRYSTALLIZATION BEHAVIOR; CRYSTALLIZATION TEMPERATURE; FLAT-BAND VOLTAGE; GATE-BIAS STRESS; GRAIN SIZE; N-CHANNEL; NMOSFET; P-CHANNEL MOS; POSITIVE BIAS; RELIABILITY CHARACTERISTICS; TETRAGONAL PHASE;

CRYSTALLIZATION; DIELECTRIC DEVICES; DIELECTRIC FILMS; GATES (TRANSISTOR); GRAIN SIZE AND SHAPE; HAFNIUM; HAFNIUM OXIDES; INTEGRATED CIRCUITS; MOS DEVICES; MOSFET DEVICES; OXIDES; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS;

GATE DIELECTRICS;

EID: 79959498440     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2136380     Document Type: Article

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