The effects of postdeposition annealing on the crystallization and electrical characteristics of HfO2 and ZrO2 gate dielectrics

Electrochemical and Solid-State Letters

Volumn 14, Issue 5, 2011, Pages

  Jung, Hyung Suk ^a   Jang, Jae Hyuck ^a   Cho, Deok Yong ^b   Jeon, Sang Ho ^a   Kim, Hyo Kyeom ^a   Lee, Sang Young ^a   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CONDUCTING PATHS; ELECTRICAL CHARACTERISTIC; HIGH TEMPERATURE; INSULATING PROPERTIES; INTERFACIAL-LAYER THICKNESS; POST DEPOSITION ANNEALING; PROCESS CONDITION; TETRAGONAL PHASE;

GATE DIELECTRICS; GATES (TRANSISTOR); GRAIN BOUNDARIES; ZIRCONIUM ALLOYS;

HAFNIUM COMPOUNDS;

EID: 79952511556     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3551460     Document Type: Article

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