Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress

Applied Physics Letters

Volumn 100, Issue 4, 2012, Pages

  Choi, Sung Hwan ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL WIDTHS; DRAIN BIAS; HOLE TRAPPING; MULTIPLE-CHANNEL; NEGATIVE SHIFT; SINGLE-CHANNEL; STRESS-INDUCED;

BIAS VOLTAGE; GALLIUM; INDIUM; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 84863063263     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3679109     Document Type: Article

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