-
2
-
-
34447254752
-
x gate dielectric deposition power and temperature on a-Si:H TFT stability
-
DOI 10.1109/LED.2007.900078
-
A. Z. Kattamis, K. H. Cherenack, B. Hekmatshoar, I. C. Cheng, H. Gleskova, J. C. Sturm, and S. Wagner, IEEE Electron Device Lett. 0741-3106 28, 606 (2007). 10.1109/LED.2007.900078 (Pubitemid 47040465)
-
(2007)
IEEE Electron Device Letters
, vol.28
, Issue.7
, pp. 606-608
-
-
Kattamis, A.Z.1
Cherenack, K.H.2
Hekmatshoar, B.3
Cheng, I.-C.4
Gleskova, H.5
Sturm, J.C.6
Wagner, S.7
-
3
-
-
33645795005
-
-
0018-9383, 10.1109/TED.2006.871174
-
T. Afentakis, M. Hatalis, A. T. Voutsas, and J. Hartzell, IEEE Trans. Electron Devices 0018-9383 53, 815 (2006). 10.1109/TED.2006.871174
-
(2006)
IEEE Trans. Electron Devices
, vol.53
, pp. 815
-
-
Afentakis, T.1
Hatalis, M.2
Voutsas, A.T.3
Hartzell, J.4
-
4
-
-
40149090305
-
Gate bias stress effects due to polymer gate dielectrics in organic thin-film transistors
-
DOI 10.1063/1.2884535
-
T. N. Ng, J. H. Daniel, S. Sambandan, A. C. Arias, M. L. Chabinyc, and R. A. Street, J. Appl. Phys. 0021-8979 103, 044506 (2008). 10.1063/1.2884535 (Pubitemid 351327561)
-
(2008)
Journal of Applied Physics
, vol.103
, Issue.4
, pp. 044506
-
-
Ng, T.N.1
Daniel, J.H.2
Sambandan, S.3
Arias, A.-C.4
Chabinyc, M.L.5
Street, R.A.6
-
5
-
-
9744248669
-
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
-
DOI 10.1038/nature03090
-
K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) 0028-0836 432, 488 (2004). 10.1038/nature03090 (Pubitemid 39585210)
-
(2004)
Nature
, vol.432
, Issue.7016
, pp. 488-492
-
-
Nomura, K.1
Ohta, H.2
Takagi, A.3
Kamiya, T.4
Hirano, M.5
Hosono, H.6
-
6
-
-
53649092548
-
-
0003-6951, 10.1063/1.2998612
-
D. -H. Cho, S. Yang, C. Byun, J. Shin, M. K. Ryu, S. -H. K. Park, C. -S. Hwang, S. M. Chung, W. -S. Cheong, S. M. Yoon, and H. -Y. Chu, Appl. Phys. Lett. 0003-6951 93, 142111 (2008). 10.1063/1.2998612
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 142111
-
-
Cho, D.-H.1
Yang, S.2
Byun, C.3
Shin, J.4
Ryu, M.K.5
Park, S.-H.K.6
Hwang, C.-S.7
Chung, S.M.8
Cheong, W.-S.9
Yoon, S.M.10
Chu, H.-Y.11
-
7
-
-
67650483313
-
-
0003-6951, 10.1063/1.3159832
-
J. -S. Park, T. -W. Kim, D. Stryakhilev, J. -S. Lee, S. -G. An, Y. -S. Pyo, D. -B. Lee, Y. G. Mo, D. -U. Jin, and H. K. Chung, Appl. Phys. Lett. 0003-6951 95, 013503 (2009). 10.1063/1.3159832
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 013503
-
-
Park, J.-S.1
Kim, T.-W.2
Stryakhilev, D.3
Lee, J.-S.4
An, S.-G.5
Pyo, Y.-S.6
Lee, D.-B.7
Mo, Y.G.8
Jin, D.-U.9
Chung, H.K.10
-
8
-
-
33750465493
-
-
1476-1122
-
L. Wang, M. -H. Yoon, G. Lu, Y. Yang, A. Facchetti, and T. J. Marks, Nature Mater. 1476-1122 5, 893 (2006).
-
(2006)
Nature Mater.
, vol.5
, pp. 893
-
-
Wang, L.1
Yoon, M.-H.2
Lu, G.3
Yang, Y.4
Facchetti, A.5
Marks, T.J.6
-
9
-
-
60349091512
-
-
0935-9648, 10.1002/adma.200801470
-
S. H. K. Park, C. -S. Hwang, M. Ryu, S. Yang, C. Byun, J. Shin, J. -I. Lee, K. Lee, M. S. Oh, and S. Lm, Adv. Mater. 0935-9648 21, 678 (2009). 10.1002/adma.200801470
-
(2009)
Adv. Mater.
, vol.21
, pp. 678
-
-
Park, S.H.K.1
Hwang, C.-S.2
Ryu, M.3
Yang, S.4
Byun, C.5
Shin, J.6
Lee, J.-I.7
Lee, K.8
Oh, M.S.9
Lm, S.10
-
10
-
-
77951878864
-
-
0741-3106
-
S. Yang, J. -I. Lee, S. -H. K. Park, W. -S. Cheong, D. -H. Cho, S. -M. Yoon, C. -W. Byun, C. -S. Hwang, H. -Y. Chu, K. -I. Cho, T. Ahn, Y. Choi, M. H. Yi, and J. Jang, IEEE Electron Device Lett. 0741-3106 31, 446 (2010).
-
(2010)
IEEE Electron Device Lett.
, vol.31
, pp. 446
-
-
Yang, S.1
Lee, J.-I.2
Park, S.-H.K.3
Cheong, W.-S.4
Cho, D.-H.5
Yoon, S.-M.6
Byun, C.-W.7
Hwang, C.-S.8
Chu, H.-Y.9
Cho, K.-I.10
Ahn, T.11
Choi, Y.12
Yi, M.H.13
Jang, J.14
-
11
-
-
43349108498
-
Hysteresis-free pentacene field-effect transistors and inverters containing poly(4-vinyl phenol-co-methyl methacrylate) gate dielectrics
-
DOI 10.1063/1.2924772
-
S. -H. Kim, J. Jang, H. Jeon, W. M. Yun, S. Nam, and C. E. Park, Appl. Phys. Lett. 0003-6951 92, 183306 (2008). 10.1063/1.2924772 (Pubitemid 351662045)
-
(2008)
Applied Physics Letters
, vol.92
, Issue.18
, pp. 183306
-
-
Kim, S.H.1
Jang, J.2
Jeon, H.3
Yun, W.M.4
Nam, S.5
Park, C.E.6
-
12
-
-
38549145327
-
Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
-
DOI 10.1063/1.2824758
-
A. Suresh and J. F. Muth, Appl. Phys. Lett. 0003-6951 92, 033502 (2008). 10.1063/1.2824758 (Pubitemid 351160654)
-
(2008)
Applied Physics Letters
, vol.92
, Issue.3
, pp. 033502
-
-
Suresh, A.1
Muth, J.F.2
-
13
-
-
52949097961
-
-
0003-6951, 10.1063/1.2990657
-
J. K. Jeong, H. Won Yang, J. H. Jeong, Y. -G. Mo, and H. D. Kim, Appl. Phys. Lett. 0003-6951 93, 123508 (2008). 10.1063/1.2990657
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 123508
-
-
Jeong, J.K.1
Won Yang, H.2
Jeong, J.H.3
Mo, Y.-G.4
Kim, H.D.5
-
14
-
-
0024888643
-
Physics of amorphous-silicon thin-film transistors
-
DOI 10.1109/16.40933
-
M. J. Powell, IEEE Trans. Electron Devices 0018-9383 36, 2753 (1989). 10.1109/16.40933 (Pubitemid 20653408)
-
(1989)
IEEE Transactions on Electron Devices
, vol.36
, Issue.12
, pp. 2753-2763
-
-
Powell Martin, J.1
-
15
-
-
0026909116
-
-
0268-1242, 10.1088/0268-1242/7/8/013
-
N. D. Young and A. Gill, Semicond. Sci. Technol. 0268-1242 7, 1103 (1992). 10.1088/0268-1242/7/8/013
-
(1992)
Semicond. Sci. Technol.
, vol.7
, pp. 1103
-
-
Young, N.D.1
Gill, A.2
-
16
-
-
0035920672
-
-
0003-6951, 10.1063/1.1394718
-
S. J. Zilker, C. Detcheverry, E. Cantatore, and D. M. de Leeuw, Appl. Phys. Lett. 0003-6951 79, 1124 (2001). 10.1063/1.1394718
-
(2001)
Appl. Phys. Lett.
, vol.79
, pp. 1124
-
-
Zilker, S.J.1
Detcheverry, C.2
Cantatore, E.3
De Leeuw, D.M.4
-
17
-
-
27344454309
-
-
1225-6463
-
S. H. K. Park, J. Oh, C. -S. Hwang, J. -I. Lee, Y. S. Yang, H. Y. Chu, and K. -Y. Kang, ETRI J. 1225-6463 27, 545 (2005).
-
(2005)
ETRI J.
, vol.27
, pp. 545
-
-
Park, S.H.K.1
Oh, J.2
Hwang, C.-S.3
Lee, J.-I.4
Yang, Y.S.5
Chu, H.Y.6
Kang, K.-Y.7
|