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Journal of the Electrochemical Society

Volumn 158, Issue 2, 2011, Pages

The impact of passivation layers on the negative bias temperature illumination instability of Ha-In-Zn-O TFT

(4) Kim, Sun Il a Kim, Sang Wook a Kim, Chang Jung a Park, Jin Seong b

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

b Dankook University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FILM ANALYSIS; HYDROGEN CONTENTS; INDIUM ZINC OXIDES; NEGATIVE BIAS; PASSIVATION LAYER; POSITIVE CHARGES; THRESHOLD VOLTAGE SHIFTS; TRAPPING SITES; WATER PERMEABILITY;

AMORPHOUS FILMS; CHARGE TRAPPING; HAFNIUM; HYDROGEN; INDIUM; SILICON; SILICON COMPOUNDS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; ZINC; ZINC OXIDE;

PASSIVATION;

EID: 78650726751 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3519987 Document Type: Article

Times cited : (20)

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