Suppression of self-heating in low-temperature polycrystalline silicon thin-film transitors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 A, 2007, Pages 1387-1391

  Hashimoto, Shinichiro ^a   Uraoka, Yukiharu ^a   Fuyuki, Takashi ^a   Morita, Yukihiro ^b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

Low temperature poly Si; Power; Reliability; Thermal degradation; Thin film transistor

Indexed keywords

BIAS VOLTAGE; DRAIN CURRENT; GATES (TRANSISTOR); POLYSILICON; PYROLYSIS; THERMAL EFFECTS;

LOW-TEMPERATURE POLY-SI; OPERATING TEMPERATURE; POLY-SI LAYERS; SPLITTING GATES;

THIN FILM TRANSISTORS;

EID: 34547887342     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.1387     Document Type: Article

References (6)

1. M. Furuta, S. Maegawa, H. Sano, T. Yoshioka, Y. Uraoka, H. Tsutsu, I. Kobayashi, T. Kawamura, and Y. Miyata: Proc. Euro Display'96, 1996, p. 547.
2. Y. Uraoka, T. Hatayama, T. Fuyuki, T. Kawamura, and Y. Tsuchihashi: IEEE Trans. Electron Devices 48 (2001) 2370.
3. S. Inoue and H. Ohshima: IEDM Tech. Dig., 1996, p. 781.
4. S. Inoue, S. Takenaka, and T. Shimoda: Jpn. J. Appl. Phys. 42 (2003) 4213.
5. S. Inoue, H. Ohshima, and T. Shimoda: Jpn. J. Appl. Phys. 41 (2002) 6313.
6. S. Hashimoto, Y. Uraoka, T. Fuyuki, and Y. Morita: Jpn. J. Appl. Phys. 45 (2006) 7.