The effect of active-layer thickness and back-channel conductivity on the subthreshold transfer characteristics of Hf-In-Zn-O TFTs

IEEE Electron Device Letters

Volumn 32, Issue 8, 2011, Pages 1077-1079

  Maeng, W J ^a   Park, Joon Seok ^a   Kim, Hyun Suk ^a   Kim, Eok Soo ^a   Son, Kyoung Seok ^a   Kim, Tae Sang ^a   Ryu, Myungkwan ^a   Lee, Sangyoon ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Active layer thickness; back channel; hump; thin film transistors (TFTs)

Indexed keywords

ACTIVE-LAYER THICKNESS; BACK CHANNEL; BACK CHANNELS; GATE FIELD; HUMP; SCREENING LENGTHS; SUBTHRESHOLD; TRANSFER CHARACTERISTICS; TRANSFER CURVES;

HAFNIUM; INDIUM; ZINC;

THIN FILM TRANSISTORS;

EID: 79960918042     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2156756     Document Type: Article

References (14)

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