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Volumn 99, Issue 12, 2011, Pages

Gate bias-stress induced hump-effect in transfer characteristics of amorphous-indium-galium-zinc-oxide thin-fim transistors with various channel widths

(3) Mativenga, Mallory a Seok, Manju a Jang, Jin a

a Kyung Hee University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL EDGES; CHANNEL WIDTHS; CURRENT LEVELS; HUMP EFFECT; POSITIVE CHARGES; STRESS TIME; SUBTHRESHOLD; SURFACE EFFECT; TRANSFER CHARACTERISTICS; TRANSISTOR SHIFT;

AMORPHOUS FILMS; THIN FILM TRANSISTORS; ZINC;

INDIUM;

EID: 80053420343 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3641473 Document Type: Article

Times cited : (94)

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