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Japanese Journal of Applied Physics

Volumn 48, Issue 3 PART 3, 2009, Pages

Self-heating of laterally grown polycrystalline silicon thin-film transistor

(2) Watanabe, Kazunori a Asano, Tanemasa a

a KYUSHU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL DIRECTIONS; DRAIN CONDUCTANCE; HEAT DISSIPATION; LATERALLY GROWN POLY-SI; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; NORMAL OPERATIONS; POLYCRYSTALLINE SILICON (POLY-SI); POLYCRYSTALLINE SILICON THIN-FILM TRANSISTOR; SELF-HEATING; SILICON-ON-INSULATORS; SOI-MOSFETS; TEMPERATURE DEPENDENT; TEMPERATURE INCREASE; THERMAL PATHS; THERMAL RESISTANCE;

FIELD EFFECT TRANSISTORS; GRAIN BOUNDARIES; GRAIN GROWTH; GRAIN SIZE AND SHAPE; HEAT RESISTANCE; HEATING; MOSFET DEVICES; POLYSILICON; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

THIN FILM TRANSISTORS;

EID: 77952487507 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.03B005 Document Type: Article

Times cited : (6)

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