Dry etching characteristics of GaN using Cl 2 /BCl 3 inductively coupled plasmas

Applied Surface Science

Volumn 257, Issue 3, 2010, Pages 905-910

  Zhou, Shengjun ^a   Cao, Bin ^b   Liu, Sheng ^a,b,c  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Etching selectivity; ICP etching; Photoluminescence measurement

Indexed keywords

ATOMIC FORCE MICROSCOPY; DRY ETCHING; ELECTROMAGNETIC INDUCTION; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDUCTIVELY COUPLED PLASMA; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; PHOTORESISTS; SAPPHIRE; SILICA; SILICON ON INSULATOR TECHNOLOGY;

ETCHING CHARACTERISTICS; ETCHING SELECTIVITY; EXTRACTION EFFICIENCIES; ICP ETCHING; PHOTOLUMINESCENCE MEASUREMENTS; PLASMA INDUCED DAMAGE; ROOT MEAN SQUARE ROUGHNESS; SAPPHIRE SUBSTRATES;

CHLORINE COMPOUNDS;

EID: 77956619240     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.07.088     Document Type: Article

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