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Applied Physics A: Materials Science and Processing

Volumn 105, Issue 2, 2011, Pages 369-377

Optimized ICP etching process for fabrication of oblique GaN sidewall and its application in LED

(3) Zhou, Shengjun a Cao, Bin b Liu, Sheng a,b,c

a SHANGHAI JIAO TONG UNIVERSITY (China)

b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

c HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-EDGE EMISSIONS; BIAS POWER; ETCH PITS; GAN EPITAXIAL LAYERS; GAS MIXING RATIO; HARD MASKS; ICP ETCHING; MESA STRUCTURE; METAL LINE; OBLIQUE ANGLES; OPERATING PRESSURE; PLASMA CHEMISTRIES; PLASMA-INDUCED DAMAGE;

CHLORINE; ETCHING; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; SCREW DISLOCATIONS; SILICON COMPOUNDS;

LIGHT EMITTING DIODES;

EID: 83555165118 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-011-6508-8 Document Type: Article

Times cited : (20)

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