Etching of n-GaN - Important step in device processing

Vacuum

Volumn 84, Issue 1, 2009, Pages 221-223

  Škriniarová, Jaroslava ^a   Kováč, Jaroslav ^a  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

GaN; Photo assisted electrochemical etching; Photo assisted electrodeless etching

Indexed keywords

DEVICE PROCESSING; ELECTRODELESS; ELECTRON HOLE PAIRS; ETCHED SURFACE; ETCHING CONDITION; ETCHING RATE; GAN; GAN LAYERS; N-DOPED; PHOTO-ASSISTED ELECTROCHEMICAL ETCHING; PHOTO-ASSISTED ELECTRODELESS ETCHING; SMOOTH SURFACE;

CORUNDUM; GALLIUM ALLOYS; GALLIUM NITRIDE; MERCURY (METAL); SEMICONDUCTING GALLIUM; WINDOWS;

ELECTROCHEMICAL ETCHING;

EID: 69249206545     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.05.023     Document Type: Article

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