Effects of plasma conditions on the etch properties of AlGaN

Vacuum

Volumn 56, Issue 1, 2000, Pages 45-49

  Kim, H S ^a   Lee, D H ^a   Lee, J W ^b   Kim, T I ^b   Yeom, G Y ^a  

^a Sungkyunkwan University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOND STRENGTH (CHEMICAL); ELECTRIC POTENTIAL; OXIDATION; PLASMA DIAGNOSTICS; PRESSURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; THERMAL EFFECTS;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA (ICP);

PLASMA ETCHING;

EID: 0033881785     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(99)00156-6     Document Type: Article

References (7)

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3. Kim H.S., Lee J.W., Kim T.I., Yeom G.Y. J Vac Sci Technol A. 17:1999;2214.
4. Park Y., Kim B.J., Lee J.W., Nam O.H., Sone C., Park H.et al. MRS Internet J Nitride Semicond Res. 4:1999;1.
5. Hirosaka Y., Nakamura M., Sugai H. J Appl Phys. 68:1990;2400.
6. McNevin S.C. J Vac Sci Technol B. 8:1988;1212.
7. Banjo T., Tsuchihashi M., Hanazaki M., Tuda M., Ono K. Jpn J Appl Phys. 36:1997;4824.