On mechanisms of argon addition influence on etching rate in chlorine plasma

Thin Solid Films

Volumn 435, Issue 1-2, 2003, Pages 232-237

  Efremov, A M ^a,b   Kim, Dong Pyo ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

^b IVANOVO STATE UNIVERSITY OF CHEMISTRY AND TECHNOLOGY   (Russian Federation)

Author keywords

Chlorine plasma; Dissociation; Electron impact; Ionization; Rate coefficient

Indexed keywords

ADDITION REACTIONS; ARGON; DISSOCIATION; ELECTRONS; IONIZATION; RATE CONSTANTS;

PLASMA CHEMISTRY;

ETCHING;

EID: 0038347097     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00330-4     Document Type: Conference Paper

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