Highly selective dry etching of III nitrides using an inductively coupled Cl2/Ar/O2 plasma

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1409-1411

  Lee, Ji Myon ^a   Chang, Ki Myung ^a   Lee, In Hwan ^a   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHLORINE; NITRIDES; OXYGEN; PLASMA ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS;

ALUMINUM GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; INDUCTIVELY-COUPLED PLASMAS (ICP);

SEMICONDUCTING FILMS;

EID: 0034187906     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591394     Document Type: Article

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