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Volumn 19, Issue 5, 2001, Pages 2522-2532

Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DRY ETCHING; GALLIUM NITRIDE; PHOTOLUMINESCENCE; PLASMA ETCHING; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0035441850     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1392400     Document Type: Article
Times cited : (60)

References (41)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.