Low-dimensional waveguide grating fabrication in GaN with Use of SiCl 4/Cl 2/ar-based inductively coupled plasma dry etching

Journal of Electronic Materials

Volumn 38, Issue 5, 2009, Pages 635-639

  Dylewicz, R ^a,b   Patela, S ^a   Hogg, R A ^c   Fry, P W ^c   Parbrook, P J ^c   Airey, R ^c   Tahraoui, A ^c  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Dry etching; Gallium nitride; Grating coupler; Inductively coupled plasma; Periodic structure

Indexed keywords

CHAMBER PRESSURES; ETCHING CONDITIONS; ETCHING SELECTIVITIES; GAS MIXING RATIOS; GRATING COUPLER; INDUCTIVELY COUPLED PLASMA DRY ETCHINGS; MASK EROSIONS; PERIODIC PATTERNS; RADIO FREQUENCY POWER; SEM; SUB MICRONS; WAVEGUIDE GRATINGS;

FABRICATION; GALLIUM ALLOYS; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; PERIODIC STRUCTURES; PHOTORESISTS; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; WAVEGUIDES;

DRY ETCHING;

EID: 62549091866     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-0731-5     Document Type: Article

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