Nonselective etching of GaN/AlGaN heterostructures by Cl 2/Ar/BCl3 inductively coupled plasmas

Science in China, Series E: Technological Sciences

Volumn 47, Issue 2, 2004, Pages 150-158

  Han, Yanjun ^a   Xue, Song ^a   Wu, Tong ^a   Wu, Zhen ^a   Guo, Wenping ^a   Luo, Yi ^a   Hao, Zhibiao ^a   Sun, Changzheng ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Al0.28Ga0.72N; Cl2 Ar BCl 3; GaN; ICP; Nonselective etching

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHLORINE COMPOUNDS; ETCHING; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; SURFACE ROUGHNESS;

ETCH RATE; NONSELECTIVE ETCHING; SMOOTH ETCHING;

HETEROJUNCTIONS;

EID: 33748914755     PISSN: 10069321     EISSN: 1862281X     Source Type: Journal    
DOI: 10.1360/03ye0256     Document Type: Article

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