Ferromagnetic germanide in Ge nanowire transistors for spintronics application

ACS Nano

Volumn 6, Issue 6, 2012, Pages 5710-5717

  Tang, Jianshi ^a   Wang, Chiu Yen ^a,b   Hung, Min Hsiu ^b   Jiang, Xiaowei ^a   Chang, Li Te ^a   He, Liang ^a   Liu, Pei Hsuan ^b   Yang, Hong Jie ^b   Tuan, Hsing Yu ^b   Chen, Lih Juann ^b   Wang, Kang L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

atomically clean interface; germanium nanowire heterostructure; manganese germanide; Mn 5Ge 3; spin injection

Indexed keywords

CONTACT PADS; ELECTRICAL SPIN INJECTION; FERROMAGNETIC CONTACTS; GERMANIDES; HIGH CURIE TEMPERATURE; HIGH QUALITY; HIGH-QUALITY INTERFACE; I-V MEASUREMENTS; NANOWIRE HETEROSTRUCTURES; NANOWIRE TRANSISTORS; ON/OFF RATIO; P-TYPE; P-TYPE BEHAVIORS; ROOM TEMPERATURE; SCHOTTKY BARRIER HEIGHTS; SINGLE-CRYSTALLINE; SPIN INJECTION; SPINTRONIC DEVICE; SPINTRONICS APPLICATION; TEMPERATURE DEPENDENT; TEMPERATURE-DEPENDENT RESISTANCE; THERMAL-ANNEALING; TRANSITION BEHAVIOR;

CURIE TEMPERATURE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; MAGNETOELECTRONICS; MANGANESE; NANOWIRES; SOLID STATE REACTIONS;

GERMANIUM;

GERMANIUM; NANOPARTICLE;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; MAGNET; MATERIALS TESTING; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GERMANIUM; MAGNETS; MATERIALS TESTING; NANOPARTICLES; PARTICLE SIZE; TRANSISTORS, ELECTRONIC;

EID: 84862893464     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn301956m     Document Type: Article

References (49)

1. Baibich, M. N.; Broto, J. M.; Fert, A.; Van Dau, F. N.; Petroff, F.; Etienne, P.; Creuzet, G.; Friederich, A.; Chazelas, J. Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices Phys. Rev. Lett. 1988, 61, 2472-2475
2. Barnaś, J.; Fuss, A.; Camley, R. E.; Grünberg, P.; Zinn, W. Novel Magnetoresistance Effect in Layered Magnetic Structures: Theory and Experiment Phys. Rev. B 1990, 42, 8110-8120
3. Žutić, I.; Fabian, J.; Das Sarma, S. Spintronics: Fundamentals and Applications Rev. Mod. Phys. 2004, 76, 323-410
4. Datta, S.; Das, B. Electronic Analog of the Electro-Optic Modulator Appl. Phys. Lett. 1990, 56, 665-667
5. Sugahara, S.; Tanaka, M. A Spin Metal-Oxide-Semiconductor Field-Effect Transistor Using Half-Metallic-Ferromagnet Contacts for the Source and Drain Appl. Phys. Lett. 2004, 84, 2307-2309
6. Wolf, S. A.; Awschalom, D. D.; Buhrman, R. A.; Daughton, J. M.; Molnar, S. v.; Roukes, M. L.; Chtchelkanova, A. Y.; Treger, D. M. Spintronics: A Spin-Based Electronics Vision for the Future Science 2001, 294, 1488-1495
7. 1- x Science 2002, 295, 651-654
8. 3 on Ge(111) Appl. Phys. Lett. 2003, 83, 5002-5004
9. 3 for Spintronic Applications Phys. Rev. B 2004, 70, 235205
10. 3 Epilayers Phys. Stat. Sol. (b) 2005, 242, R67-R69
11. 3/Ge(111) Heterostructures for Spin Injection Thin Solid Films 2008, 517, 191-196
12. x Nanowires as Building Blocks for Nanoelectronics Nano Lett. 2009, 9, 50-56
13. 0.95 Quantum Dots Nat. Mater. 2010, 9, 337-344
14. 0.95 Quantum Dots ACS Nano 2010, 4, 4948-4954
15. Sugahara, S.; Lee, K. L.; Yada, S.; Tanaka, M. Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-Doped Ge Thin Films Jpn. J. Appl. Phys. 2005, 44, L1426-L1429
16. 0.04 Thin Films Appl. Phys. Lett. 2008, 92, 101913
17. Zhou, Y.; Han, W.; Chang, L.-T.; Xiu, F.; Wang, M.; Oehme, M.; Fischer, I. A.; Schulze, J.; Kawakami, R. K.; Wang, K. L. Electrical Spin Injection and Transport in Germanium Phys. Rev. B 2011, 84, 125323
18. Jeon, K.-R.; Min, B.-C.; Jo, Y.-H.; Lee, H.-S.; Shin, I.-J.; Park, C.-Y.; Park, S.-Y.; Shin, S.-C. Electrical Spin Injection and Accumulation in CoFe/MgO/Ge Contacts at Room Temperature Phys. Rev. B 2011, 84, 165315
19. Hanbicki, A. T.; Cheng, S. F.; Goswami, R.; van 't Erve, O. M. J.; Jonker, B. T. Electrical Injection and Detection of Spin Accumulation in Ge at Room Temperature Solid State Commun. 2012, 152, 244-248
20. Liu, E.-S.; Nah, J.; Varahramyan, K. M.; Tutuc, E. Lateral Spin Injection in Germanium Nanowires Nano Lett. 2010, 10, 3297-3301
21. Holleitner, A. W.; Sih, V.; Myers, R. C.; Gossard, A. C.; Awschalom, D. D. Dimensionally Constrained D'yakonov-Perel' Spin Relaxation in n -InGaAs Channels: Transition from 2D to 1D New J. Phys. 2007, 9, 342
22. 3/ n -type Germanium Interface Using Three Terminal Geometry Appl. Phys. Lett. 2011, 99, 162102
23. Dash, S. P.; Sharma, S.; Le Breton, J. C.; Peiro, J.; Jaffrès, H.; George, J. M.; Lemaître, A.; Jansen, R. Spin Precession and Inverted Hanle Effect in a Semiconductor near a Finite-Roughness Ferromagnetic Interface Phys. Rev. B 2011, 84, 054410
24. Dimoulas, A.; Tsipas, P.; Sotiropoulos, A.; Evangelou, E. K. Fermi-Level Pinning and Charge Neutrality Level in Germanium Appl. Phys. Lett. 2006, 89, 252110
25. Schmidt, G.; Ferrand, D.; Molenkamp, L. W.; Filip, A. T.; van Wees, B. J. Fundamental Obstacle for Electrical Spin Injection from a Ferromagnetic Metal into a Diffusive Semiconductor Phys. Rev. B 2000, 62, R4790-R4793
26. Han, W.; Zhou, Y.; Wang, Y.; Li, Y.; Wong, J. J. I.; Pi, K.; Swartz, A. G.; McCreary, K. M.; Xiu, F.; Wang, K. L. et al. Growth of Single-Crystalline, Atomically Smooth MgO Films on Ge(001) by Molecular Beam Epitaxy J. Cryst. Growth 2009, 312, 44-47
27. Albrecht, J. D.; Smith, D. L. Spin-Polarized Electron Transport at Ferromagnet/Semiconductor Schottky Contacts Phys. Rev. B 2003, 68, 035340
28. Zhu, H. J.; Ramsteiner, M.; Kostial, H.; Wassermeier, M.; Schönherr, H.-P.; Ploog, K. H. Room-Temperature Spin Injection from Fe into GaAs Phys. Rev. Lett. 2001, 87, 016601
29. 3Si/Si Schottky Tunnel Barrier Appl. Phys. Lett. 2009, 94, 182105
30. 3 Tunnel Contacts Appl. Phys. Lett. 2009, 94, 122106
31. 3 Tunnel Barrier Contacts for Electrical Spin Injection into GaAs Appl. Phys. Lett. 2004, 84, 4334-4336
32. Kasahara, K.; Baba, Y.; Yamane, K.; Ando, Y.; Yamada, S.; Hoshi, Y.; Sawano, K.; Miyao, M.; Hamaya, K. Spin Accumulation Created Electrically in an n -Type Germanium Channel Using Schottky Tunnel Contacts J. Appl. Phys. 2012, 111, 07C503
33. Wu, Y.; Xiang, J.; Yang, C.; Lu, W.; Lieber, C. M. Single-Crystal Metallic Nanowires and Metal/Semiconductor Nanowire Heterostructures Nature 2004, 430, 61-65
34. Weber, W. M.; Geelhaar, L.; Graham, A. P.; Unger, E.; Duesberg, G. S.; Liebau, M.; Pamler, W.; Chèze, C.; Riechert, H.; Lugli, P. et al. Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts Nano Lett. 2006, 6, 2660-2666
35. Lu, K.-C.; Wu, W.-W.; Wu, H.-W.; Tanner, C. M.; Chang, J. P.; Chen, L. J.; Tu, K. N. In Situ Control of Atomic-Scale Si Layer with Huge Strain in the Nanoheterostructure NiSi/Si/NiSi through Point Contact Reaction Nano Lett. 2007, 7, 2389-2394
36. 2 in Nanowires of Si Nano Lett. 2008, 8, 2194-2199
37. Lin, Y.-C.; Lu, K.-C.; Wu, W.-W.; Bai, J.; Chen, L. J.; Tu, K. N.; Huang, Y. Single Crystalline PtSi Nanowires, PtSi/Si/PtSi Nanowire Heterostructures, and Nanodevices Nano Lett. 2008, 8, 913-918
38. Burchhart, T.; Lugstein, A.; Hyun, Y. J.; Hochleitner, G.; Bertagnolli, E. Atomic Scale Alignment of Copper-Germanide Contacts for Ge Nanowire Metal Oxide Field Effect Transistors Nano Lett. 2009, 9, 3739-3742
39. 2Ge Nanowire Heterostructure Transistors Nanotechnology 2010, 21, 505704
40. Dellas, N. S.; Minassian, S.; Redwing, J. M.; Mohney, S. E. Formation of Nickel Germanide Contacts to Ge Nanowires Appl. Phys. Lett. 2010, 97, 263116
41. Lin, Y.-C.; Chen, Y.; Shailos, A.; Huang, Y. Detection of Spin Polarized Carrier in Silicon Nanowire with Single Crystal MnSi as Magnetic Contacts Nano Lett. 2010, 10, 2281-2287
42. Tang, J.; Wang, C.-Y.; Xiu, F.; Lang, M.; Chu, L.-W.; Tsai, C.-J.; Chueh, Y.-L.; Chen, L.-J.; Wang, K. L. Oxide-Confined Formation of Germanium Nanowire Heterostructures for High-Performance Transistors ACS Nano 2011, 5, 6008-6015
43. Tang, J.; Wang, C.-Y.; Xiu, F.; Zhou, Y.; Chen, L.-J.; Wang, K. L. Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing Adv. Mater. Sci. Eng. 2011, 2011, 316513
44. 3 Films J. Magn. Magn. Mater. 2000, 221, 248-254
45. Wunnicke, O. Gate Capacitance of Back-Gated Nanowire Field-Effect Transistors Appl. Phys. Lett. 2006, 89, 083102
46. Yang, H.-J.; Tuan, H.-Y. High-Yield, High-Throughput Synthesis of Germanium Nanowires by Metal-Organic Chemical Vapor Deposition and Their Functionalization and Applications J. Mater. Chem. 2012, 22, 2215-2225
47. Liu, F.-K.; Chang, Y.-C.; Chang, Ko F.-H.; Chu, T.-C.; Dai, B.-T. Rapid Fabrication of High Quality Self-Assembled Nanometer Gold Particles by Spin Coating Method Microelectron. Eng. 2003, 67-68, 702-709
48. Zhang, S.; Hemesath, E. R.; Perea, D. E.; Wijaya, E.; Lensch-Falk, J. L.; Lauhon, L. J. Relative Influence of Surface States and Bulk Impurities on the Electrical Properties of Ge Nanowires Nano Lett. 2009, 9, 3268-3274
49. Zhang, L.; Tu, R.; Dai, H. Parallel Core-Shell Metal-Dielectric- Semiconductor Germanium Nanowires for High-Current Surround-Gate Field-Effect Transistors Nano Lett. 2006, 6, 2785-2789