Detection of spin polarized carrier in silicon nanowire with single crystal MnSi as magnetic contacts

Nano Letters

Volumn 10, Issue 6, 2010, Pages 2281-2287

  Lin, Yung Chen ^a   Chen, Yu ^a   Shailos, Alexandros ^a   Huang, Yu ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Magnetic contact; Manganese silicide; Silicon nanowire; Spintronics

Indexed keywords

ATOMICALLY SHARP INTERFACE; CARRIER TUNNELING; EPITAXIAL RELATIONSHIPS; FERROMAGNETIC TRANSITION TEMPERATURES; HETEROSTRUCTURES; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; LOW TEMPERATURES; MAGNETIC CONTACTS; MANGANESE SILICIDE; METALLIC BEHAVIORS; NANOWIRE HETEROSTRUCTURES; SCHOTTKY BARRIERS; SILICON NANODEVICES; SILICON NANOSTRUCTURES; SILICON NANOWIRES; SPIN TRANSPORT; SPIN-POLARIZED CARRIERS; SPINTRONICS;

ELECTRIC RESISTANCE; MAGNETIC FIELD EFFECTS; MAGNETIC MATERIALS; MAGNETORESISTANCE; MANGANESE; MANGANESE COMPOUNDS; NANOTECHNOLOGY; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SINGLE CRYSTALS; SPIN DYNAMICS; SPIN POLARIZATION; TRANSMISSION ELECTRON MICROSCOPY;

SILICON WAFERS;

EID: 77953298463     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl101477q     Document Type: Article

References (40)

1. Zutic, I.; Fabian, J.; Das Sarma, S. Rev. Mod. Phys. 2004, 76, 323-410
2. Dash, S. P.; Sharma, S.; Patel, R. S.; de Jong, M. P.; Jansen, R. Nature 2009, 462, 491-494
3. Schliemann, J.; Egues, J. C.; Loss, D. Phys. Rev. Lett. 2003, 90, 146801-1-146801-4
4. Dery, H.; Dalal, P.; Cywinski, L.; Sham, L. J. Nature 2007, 447, 573-576
5. Datta, S.; Das, B. Appl. Phys. Lett. 1990, 56, 665-667
6. Lou, X. H.; Adelmann, C.; Crooker, S. A.; Garlid, E. S.; Zhang, J.; Reddy, K. S. M.; Flexner, S. D.; Palmstrom, C. J.; Crowell, P. A. Nat. Phys. 2007, 3, 197-202
7. Ando, Y.; Hamaya, K.; Kasahara, K.; Kishi, Y.; Ueda, K.; Sawano, K.; Sadoh, T.; Miyao, M. Appl. Phys. Lett. 2009, 94, 182105-1-182105-3
8. Chappert, C.; Fert, A.; Van Dau, F. N. Nat. Mater. 2007, 6, 813-823
9. Rashba, E. I. Phys. Rev. B 2000, 62, R16267-R16270
10. Sugahara, S.; Tanaka, M. J. Appl. Phys. 2005, 97, 10D503-1-10D503-3
11. Sugahara, S.; Tanaka, M. Appl. Phys. Lett. 2004, 84, 2307-2309
12. Ohno, H.; Chiba, D.; Matsukura, F.; Omiya, T.; Abe, E.; Dietl, T.; Ohno, Y.; Ohtani, K. Nature 2000, 408, 944-946
13. Hall, K. C.; Lau, W. H.; Gundogdu, K.; Flatte, M. E.; Boggess, T. F. Appl. Phys. Lett. 2003, 83, 2937-2939
14. Dietl, T.; Ohno, H.; Matsukura, F.; Cibert, J.; Ferrand, D. Science 2000, 287, 1019-1022
15. Liu, C.; Yun, F.; Morkoc, H. J. Mater. Sci.: Mater. Electron. 2005, 16, 555-597
16. Yang, Z.; Beyermann, W. P.; Katz, M. B.; Ezekoye, O. K.; Zuo, Z.; Pu, Y.; Shi, J.; Pan, X. Q.; Liu, J. L. J. Appl. Phys. 2009, 105 053708-1-053708-6
17. Liang, W. J.; Yuhas, B. D.; Yang, P. D. Nano Lett. 2009, 9, 892-896
18. Hangarter, C. M.; Myung, N. V. Chem. Mater. 2005, 17, 1320-1324
19. Xiu, F.; Wang, Y.; Kim, J.; Hong, A.; Tang, J.; Jacob, A. P.; Zou, J.; Wang, K. L. Nat. Mater. 2010, 9, 337-344
20. Appelbaum, I.; Huang, B. Q.; Monsma, D. J. Nature 2007, 447, 295-298
21. Min, B. C.; Motohashi, K.; Lodder, C.; Jansen, R. Nat. Mater. 2006, 5, 817-822
22. Lin, Y. C.; Lu, K. C.; Wu, W. W.; Bai, J. W.; Chen, L. J.; Tu, K. N.; Huang, Y. Nano Lett. 2008, 8, 913-918
23. Chou, Y. C.; Wu, W. W.; Chen, L. J.; Tu, K. N. Nano Lett. 2009, 9, 2337-2342
24. Burchhart, T.; Lugstein, A.; Hyun, Y. J.; Hochleitner, G.; Bertagnolli, E. Nano Lett. 2009, 9, 3739-3742
25. Wu, Y.; Xiang, J.; Yang, C.; Lu, W.; Lieber, C. M. Nature 2004, 430, 61-65
26. Manyala, N.; Sidis, Y.; DiTusa, J. F.; Aeppli, G.; Young, D. P.; Fisk, Z. Nature 2000, 404, 581-584
27. Pfleiderer, C.; Julian, S. R.; Lonzarich, G. G. Nature 2001, 414, 427-430
28. Wu, H.; Hortamani, M.; Kratzer, P.; Scheffler, M. Phys. Rev. Lett. 2004, 92, 237202-1-237202-4
29. Hannon, J. B.; Kodambaka, S.; Ross, F. M.; Tromp, R. M. Nature 2006, 440, 69-71
30. Ishikawa, Y.; Arai, M. J. Phys. Soc. Jpn. 1984, 53, 2726-2733
31. Higgins, J. M.; Ding, R.; Degrave, J. P.; Jin, S. Nano Lett. 2010, 10, 1605-1610
32. Eagnano, E.; Bondino, F.; Cepek, C.; Parmigiani, F.; Mozzati, C. Appl. Phys. Lett. 2010, 96, 32
33. Hortamani, M.; Sandratskii, L.; Kratzer, P.; Mertig, I.; Scheffler, M. Phys. Rev. B 2008, 78, 104402
34. Eizenberg, M.; Tu, K. N. J. Appl. Phys. 1982, 53, 6885-6890
35. Nam, C. Y.; Tham, D.; Fischer, J. E. Nano Lett. 2005, 5, 2029-2033
36. Sze, S. M. Physics of Semiconductor Devices; Wiley: New York, 1981.
37. de Araujo, C. I. L.; Munford, M. L.; Delatorre, R. G.; da Silva, R. C.; Zoldan, V. C.; Pasa, A. A.; Garcia, N. Appl. Phys. Lett. 2008, 92, 222101-1-222101-3
38. Fowler, R. H.; Nordheim, L. Proc. R. Soc. London, Ser. A 1928, 119, 173
39. Davids, P. S.; Kogan, S. M.; Parker, I. D.; Smith, D. L. Appl. Phys. Lett. 1996, 69, 2270-2272
40. Jia, Y. Q.; Shi, R. C.; Chou, S. Y. IEEE Trans. Magn. 1996, 32, 4707-4709