Single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure transistors

Nanotechnology

Volumn 21, Issue 50, 2010, Pages

  Tang, Jianshi ^a   Wang, Chiu Yen ^b   Xiu, Faxian ^a   Hong, Augustin J ^a   Chen, Shengyu ^b   Wang, Minsheng ^a   Zeng, Caifu ^a   Yang, Hong Jie ^b   Tuan, Hsing Yu ^b   Tsai, Cho Jen ^b   Chen, Lih Juann ^b   Wang, Kang L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMICALLY SHARP INTERFACE; BACK-GATE; CONTROLLED REACTIONS; ELECTRICAL MEASUREMENT; EPITAXIAL RELATIONSHIPS; FIELD EFFECTS; GE(100); GERMANIDES; HETEROSTRUCTURES; IN-SITU REACTIONS; LIQUID SOLIDS; LOW RESISTIVITY; MAXIMUM CURRENT DENSITY; NI METAL; ON/OFF RATIO; ORDER OF MAGNITUDE; P-TYPE; SEM; SINGLE-CRYSTALLINE; TEM; TEMPERATURE RANGE;

CRYSTALLINE MATERIALS; EFFLUENT TREATMENT; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; HOLE MOBILITY; MESFET DEVICES; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SUPERCRITICAL FLUIDS; TRANSMISSION ELECTRON MICROSCOPY;

GERMANIUM;

EID: 78650162486     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/50/505704     Document Type: Article

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