Electrical injection and detection of spin accumulation in Ge at room temperature

Solid State Communications

Volumn 152, Issue 4, 2012, Pages 244-248

  Hanbicki, A T ^a   Cheng, S F ^a   Goswami, R ^b   Van 'T Erve, O M J ^a   Jonker, B T ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SCIENCE APPLICATIONS INTERNATIONAL CORPORATION   (United States)

Author keywords

A. Magnetic films and multilayers; A. Semiconductors; D. Spin accumulation

Indexed keywords

APPLIED MAGNETIC FIELDS; BAND STATE; DEPHASING; DIFFUSION LENGTH; ELECTRICAL INJECTION; ELECTRON CONCENTRATION; ELECTRON DENSITIES; HANLE EFFECTS; MAGNETIC FILMS AND MULTILAYERS; N-TYPE GE; RESISTANCE-AREA PRODUCTS; REVERSE BIAS; ROOM TEMPERATURE; SPIN LIFETIMES; SPIN-ACCUMULATIONS; SPIN-POLARIZED ELECTRONS; TUNNEL BARRIER;

CARRIER CONCENTRATION; ELECTRONS; GERMANIUM; MAGNETIC FIELDS; MAGNETIC MOMENTS;

ELECTROSPINNING;

EID: 84855879558     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2011.11.033     Document Type: Article

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