메뉴 건너뛰기




Volumn 2011, Issue , 2011, Pages

Formation and device application of Ge nanowire heterostructures via rapid thermal annealing

Author keywords

[No Author keywords available]

Indexed keywords


EID: 84555163781     PISSN: 16878434     EISSN: 16878442     Source Type: Journal    
DOI: 10.1155/2011/316513     Document Type: Review
Times cited : (29)

References (39)
  • 3
    • 0035834415 scopus 로고    scopus 로고
    • Logic gates and computation from assembled nanowire building blocks
    • DOI 10.1126/science.1066192
    • Huang Y., Duan X., Cui Y., Lauhon L. J., Kim K. H., Lieber C. M., Logic gates and computation from assembled nanowire building blocks Science 2001 294 5545 1313 1317 (Pubitemid 33063091)
    • (2001) Science , vol.294 , Issue.5545 , pp. 1313-1317
    • Huang, Y.1    Duan, X.2    Cui, Y.3    Lauhon, L.J.4    Kim, K.-H.5    Lieber, C.M.6
  • 5
    • 0035902938 scopus 로고    scopus 로고
    • Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species
    • DOI 10.1126/science.1062711
    • Cui Y., Wei Q., Park H., Lieber C. M., Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species Science 2001 293 5533 1289 1292 (Pubitemid 32777412)
    • (2001) Science , vol.293 , Issue.5533 , pp. 1289-1292
    • Cui, Y.1    Wei, Q.2    Park, H.3    Lieber, C.M.4
  • 6
    • 3142684485 scopus 로고    scopus 로고
    • Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures
    • DOI 10.1038/nature02674
    • Wu Y., Xiang J., Yang C., Lu W., Lieber C. M., Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures Nature 2004 430 6995 61 65 (Pubitemid 38915222)
    • (2004) Nature , vol.430 , Issue.6995 , pp. 61-65
    • Wu, Y.1    Xiang, J.2    Yang, C.3    Lu, W.4    Lieber, C.M.5
  • 8
    • 34548169162 scopus 로고    scopus 로고
    • In situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction
    • DOI 10.1021/nl071046u
    • Lu K. C., Wu W. W., Wu H. W., Tanner C. M., Chang J. P., Chen L. J., Tu K. N., In situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction Nano Letters 2007 7 8 2389 2394 (Pubitemid 47310136)
    • (2007) Nano Letters , vol.7 , Issue.8 , pp. 2389-2394
    • Lu, K.-C.1    Wu, W.-W.2    Wu, H.-W.3    Tanner, C.M.4    Chang, J.P.5    Chen, L.J.6    Tu, K.N.7
  • 9
    • 52049083218 scopus 로고    scopus 로고
    • In-situ TEM Observation of repeating events of nucleation in epitaxial growth of nano CoSi 2 in nanowires of Si
    • Chou Y. C., Wu W. W., Cheng S. L., Yoo B. Y., Myung N., Chen L. J., Tut K. N., In-situ TEM Observation of repeating events of nucleation in epitaxial growth of nano CoSi 2 in nanowires of Si Nano Letters 2008 8 8 2194 2199
    • (2008) Nano Letters , vol.8 , Issue.8 , pp. 2194-2199
    • Chou, Y.C.1    Wu, W.W.2    Cheng, S.L.3    Yoo, B.Y.4    Myung, N.5    Chen, L.J.6    Tut, K.N.7
  • 10
    • 55749106827 scopus 로고    scopus 로고
    • Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices
    • Lin Y. C., Lu K. C., Wu W. W., Bai J., Chen L. J., Tu K. N., Huang Y., Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices Nano Letters 2008 8 3 913 918
    • (2008) Nano Letters , vol.8 , Issue.3 , pp. 913-918
    • Lin, Y.C.1    Lu, K.C.2    Wu, W.W.3    Bai, J.4    Chen, L.J.5    Tu, K.N.6    Huang, Y.7
  • 11
    • 77953298463 scopus 로고    scopus 로고
    • Detection of spin polarized carrier in silicon nanowire with single crystal MnSi as magnetic contacts
    • Lin Y. C., Chen Y., Shailos A., Huang Y., Detection of spin polarized carrier in silicon nanowire with single crystal MnSi as magnetic contacts Nano Letters 2010 10 6 2281 2287
    • (2010) Nano Letters , vol.10 , Issue.6 , pp. 2281-2287
    • Lin, Y.C.1    Chen, Y.2    Shailos, A.3    Huang, Y.4
  • 12
    • 56849119293 scopus 로고    scopus 로고
    • Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide
    • Zhou Y., Ogawa M., Han X., Wang K. L., Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide Applied Physics Letters 2008 93 20
    • (2008) Applied Physics Letters , vol.93 , Issue.20
    • Zhou, Y.1    Ogawa, M.2    Han, X.3    Wang, K.L.4
  • 14
    • 79961034101 scopus 로고    scopus 로고
    • Oxide-confined formation of Ge nanowire heterostructure for high-performance transistors
    • Tang J., Wang C. Y., Xiu F., Oxide-confined formation of Ge nanowire heterostructure for high-performance transistors ACS Nano 2011 5 7 6008 6015
    • (2011) ACS Nano , vol.5 , Issue.7 , pp. 6008-6015
    • Tang, J.1    Wang, C.Y.2    Xiu, F.3
  • 16
    • 72849112144 scopus 로고    scopus 로고
    • Atomic scale alignment of copper-germanide contacts for ge nanowire metal oxide field effect transistors
    • Burchhart T., Lugstein A., Hyun Y. J., Hochleitner G., Bertagnolli E., Atomic scale alignment of copper-germanide contacts for ge nanowire metal oxide field effect transistors Nano Letters 2009 9 11 3739 3742
    • (2009) Nano Letters , vol.9 , Issue.11 , pp. 3739-3742
    • Burchhart, T.1    Lugstein, A.2    Hyun, Y.J.3    Hochleitner, G.4    Bertagnolli, E.5
  • 20
    • 10444264513 scopus 로고    scopus 로고
    • Ferromagnetic properties of cyclically deformed Fe 3 Ge and Ni 3 Ge
    • Izumi T., Taniguchi M., Kumai S., Sato A., Ferromagnetic properties of cyclically deformed Fe 3 Ge and Ni 3 Ge Philosophical Magazine 2004 84 36 3883 3895
    • (2004) Philosophical Magazine , vol.84 , Issue.36 , pp. 3883-3895
    • Izumi, T.1    Taniguchi, M.2    Kumai, S.3    Sato, A.4
  • 22
    • 40549110656 scopus 로고    scopus 로고
    • Importance of solvent-mediated phenylsilane decompositon kinetics for high-yield solution-phase silicon nanowire synthesis
    • DOI 10.1021/cm7033068
    • Tuan H. Y., Korgel B. A., Importance of solvent-mediated phenylsilane decompositon kinetics for high-yield solution-phase silicon nanowire synthesis Chemistry of Materials 2008 20 4 1239 1241 (Pubitemid 351363041)
    • (2008) Chemistry of Materials , vol.20 , Issue.4 , pp. 1239-1241
    • Tuan, H.-Y.1    Korgel, B.A.2
  • 23
    • 0037418375 scopus 로고    scopus 로고
    • Supercritical fluid-liquid-solid (SFLS) synthesis of Si and Ge nanowires seeded by colloidal metal nanocrystals
    • Hanrath T., Korgel B. A., Supercritical fluid-liquid-solid (SFLS) synthesis of Si and Ge nanowires seeded by colloidal metal nanocrystals Advanced Materials 2003 15 5 437 440
    • (2003) Advanced Materials , vol.15 , Issue.5 , pp. 437-440
    • Hanrath, T.1    Korgel, B.A.2
  • 25
    • 33646348479 scopus 로고    scopus 로고
    • Temperature dependence of the field effect mobility of solution-grown germanium nanowires
    • DOI 10.1021/jp055663n
    • Schricker A. D., Joshi S. V., Hanrath T., Banerjee S. K., Korgel B. A., Temperature dependence of the field effect mobility of solution-grown germanium nanowires Journal of Physical Chemistry B 2006 110 13 6816 6823 (Pubitemid 43672152)
    • (2006) Journal of Physical Chemistry B , vol.110 , Issue.13 , pp. 6816-6823
    • Schricker, A.D.1    Joshi, S.V.2    Hanrath, T.3    Banerjee, S.K.4    Korgel, B.A.5
  • 26
    • 17144410348 scopus 로고    scopus 로고
    • Influence of surface states on electron transport through intrinsic Ge nanowires
    • DOI 10.1021/jp044491b
    • Hanrath T., Korgel B. A., Influence of surface states on electron transport through intrinsic Ge nanowires Journal of Physical Chemistry B 2005 109 12 5518 5524 (Pubitemid 40519451)
    • (2005) Journal of Physical Chemistry B , vol.109 , Issue.12 , pp. 5518-5524
    • Hanrath, T.1    Korgel, B.A.2
  • 27
    • 70349956650 scopus 로고    scopus 로고
    • Relative influence of surface states and bulk impurities on the electrical properties of Ge nanowires
    • Zhang S., Hemesath E. R., Perea D. E., Wijaya E., Lensch-Falk J. L., Lauhon L. J., Relative influence of surface states and bulk impurities on the electrical properties of Ge nanowires Nano Letters 2009 9 9 3268 3274
    • (2009) Nano Letters , vol.9 , Issue.9 , pp. 3268-3274
    • Zhang, S.1    Hemesath, E.R.2    Perea, D.E.3    Wijaya, E.4    Lensch-Falk, J.L.5    Lauhon, L.J.6
  • 28
    • 0024054852 scopus 로고
    • Partial epitaxial growth of Ni 2 Ge and NiGe on Ge(111)
    • Hsieh Y. F., Chen L. J., Marshall E. D., Lau S. S., Partial epitaxial growth of Ni 2 Ge and NiGe on Ge(111) Thin Solid Films 1988 162 287 294
    • (1988) Thin Solid Films , vol.162 , pp. 287-294
    • Hsieh, Y.F.1    Chen, L.J.2    Marshall, E.D.3    Lau, S.S.4
  • 29
    • 0035804706 scopus 로고    scopus 로고
    • Melting and welding semiconductor nanowires in nanotubes
    • DOI 10.1002/1521-4095(200104)13:7<520::AID-ADMA520>3.0.CO;2-W
    • Wu Y., Yang P., Melting and welding semiconductor nanowires in nanotubes Advanced Materials 2001 13 7 520 523 (Pubitemid 32366389)
    • (2001) Advanced Materials , vol.13 , Issue.7 , pp. 520-523
    • Wu, Y.1    Yang, P.2
  • 30
    • 78449291428 scopus 로고    scopus 로고
    • Growth of nickel silicides in Si and Si/SiO x core/shell nanowires
    • Lin Y. C., Chen Y., Xu D., Huang Y., Growth of nickel silicides in Si and Si/SiO x core/shell nanowires Nano Letters 2010 10 11 4721 4726
    • (2010) Nano Letters , vol.10 , Issue.11 , pp. 4721-4726
    • Lin, Y.C.1    Chen, Y.2    Xu, D.3    Huang, Y.4
  • 31
    • 77949754111 scopus 로고    scopus 로고
    • Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films
    • Zhou Y., Han W., Wang Y., Xiu F., Zou J., Kawakami R. K., Wang K. L., Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films Applied Physics Letters 2010 96 10
    • (2010) Applied Physics Letters , vol.96 , Issue.10
    • Zhou, Y.1    Han, W.2    Wang, Y.3    Xiu, F.4    Zou, J.5    Kawakami, R.K.6    Wang, K.L.7
  • 34
    • 66749131372 scopus 로고    scopus 로고
    • Homogeneous nucleation of epitaxial CoSi 2 and NiSi in Si nanowires
    • Chou Y. C., Wu W. W., Chen L. J., Tu K. N., Homogeneous nucleation of epitaxial CoSi 2 and NiSi in Si nanowires Nano Letters 2009 9 6 2337 2342
    • (2009) Nano Letters , vol.9 , Issue.6 , pp. 2337-2342
    • Chou, Y.C.1    Wu, W.W.2    Chen, L.J.3    Tu, K.N.4
  • 35
    • 78649318471 scopus 로고    scopus 로고
    • In situ TEM investigation of dynamical changes of nanostructures
    • Chen L. J., Wu W. W., In situ TEM investigation of dynamical changes of nanostructures Materials Science and Engineering R 2010 70 36 303 319
    • (2010) Materials Science and Engineering R , vol.70 , Issue.36 , pp. 303-319
    • Chen, L.J.1    Wu, W.W.2
  • 36
    • 78651465924 scopus 로고    scopus 로고
    • Heterogeneous and homogeneous nucleation of epitaxial NiSi 2 in [110] Si nanowires
    • Chou Y. C., Wu W. W., Lee C. Y., Liu C. Y., Chen L. J., Tu K. N., Heterogeneous and homogeneous nucleation of epitaxial NiSi 2 in [110] Si nanowires Journal of Physical Chemistry C 2011 115 2 397 401
    • (2011) Journal of Physical Chemistry C , vol.115 , Issue.2 , pp. 397-401
    • Chou, Y.C.1    Wu, W.W.2    Lee, C.Y.3    Liu, C.Y.4    Chen, L.J.5    Tu, K.N.6
  • 37
    • 34547306773 scopus 로고    scopus 로고
    • Point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano-NiSi/Si
    • Lu K. C., Tu K. N., Wu W. W., Chen L. J., Yoo B. Y., Myung N. V., Point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano-NiSi/Si Applied Physics Letters 2007 90 25
    • (2007) Applied Physics Letters , vol.90 , Issue.25
    • Lu, K.C.1    Tu, K.N.2    Wu, W.W.3    Chen, L.J.4    Yoo, B.Y.5    Myung, N.V.6
  • 38
    • 77958038235 scopus 로고    scopus 로고
    • Growth of multiple metal/semiconductor nanoheterostructures through point and line contact reactions
    • Wu W. W., Lu K. C., Wang C. W., Hsieh H. Y., Chen S. Y., Chou Y. C., Yu S. Y., Chen L. J., Tu K. N., Growth of multiple metal/semiconductor nanoheterostructures through point and line contact reactions Nano Letters 2010 10 10 3984 3989
    • (2010) Nano Letters , vol.10 , Issue.10 , pp. 3984-3989
    • Wu, W.W.1    Lu, K.C.2    Wang, C.W.3    Hsieh, H.Y.4    Chen, S.Y.5    Chou, Y.C.6    Yu, S.Y.7    Chen, L.J.8    Tu, K.N.9
  • 39
    • 78649303881 scopus 로고    scopus 로고
    • Controlled large strain of Ni silicide/Si/Ni silicide nanowire heterostructures and their electron transport properties
    • Wu W. W., Lu K. C., Chen K. N., Yeh P. H., Wang C. W., Lin Y. C., Huang Y., Controlled large strain of Ni silicide/Si/Ni silicide nanowire heterostructures and their electron transport properties Applied Physics Letters 2010 97 20
    • (2010) Applied Physics Letters , vol.97 , Issue.20
    • Wu, W.W.1    Lu, K.C.2    Chen, K.N.3    Yeh, P.H.4    Wang, C.W.5    Lin, Y.C.6    Huang, Y.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.