Atomic scale alignment of copper-germanide contacts for ge nanowire metal oxide field effect transistors

Nano Letters

Volumn 9, Issue 11, 2009, Pages 3739-3742

  Burchhart, T ^a   Lugstein, A ^a   Hyun, Y J ^a   Hochleitner, G ^a   Bertagnolli, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE; ATOMICALLY SHARP INTERFACE; FORMATION PROCESS; GERMANIDES; HETEROSTRUCTURES; IN-SITU; LENGTH CONTROL; MAXIMUM CURRENT DENSITY; METAL OXIDE FIELD EFFECT TRANSISTORS; METALLIC PROPERTIES; P-TYPE; SCHOTTKY; SCHOTTKY BARRIER HEIGHTS; SEM; TEMPERATURE DEPENDENT; THERMOIONIC EMISSIONS; VAPOR-LIQUID-SOLID;

CHEMICAL REACTIONS; COPPER; COPPER OXIDES; GERMANIUM; METALLIC COMPOUNDS; NANOWIRES; SCHOTTKY BARRIER DIODES; SINGLE CRYSTALS;

FIELD EFFECT TRANSISTORS;

EID: 72849112144     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl9019243     Document Type: Article

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