Formation of nickel germanide contacts to Ge nanowires

Applied Physics Letters

Volumn 97, Issue 26, 2010, Pages

  Dellas, N S ^a   Minassian, S ^b   Redwing, J M ^a   Mohney, S E ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b The Pennsylvania State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL RELATIONSHIPS; NI CONTACTS; NICKEL GERMANIDE; NICKEL SILICIDE; POLYCRYSTALLINE; PROTOTYPE STRUCTURES; SI DEVICES; SI NANOWIRE;

ANNEALING; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; GERMANIUM; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SOLID STATE REACTIONS;

NICKEL;

EID: 78650906359     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3533808     Document Type: Article

References (24)

1. D. Wang, Q. Wang, A. Javey, R. Tu, H. Dai, H. Kim, P. C. McIntyre, T. Krishnamohan, and K. C. Saraswat, Appl. Phys. Lett. 0003-6951 83, 2432 (2003). 10.1063/1.1611644
2. M. Koto, P. W. Leu, and P. C. McIntyre, J. Electrochem. Soc. 0013-4651 156, K11 (2009). 10.1149/1.3033522
3. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (Wiley, New York, 2007), p. 789.
4. Y. Maeda, N. Tsukamoto, Y. Yazawa, Y. Kanemitsu, and Y. Masumoto, Appl. Phys. Lett. 0003-6951 59, 3168 (1991). 10.1063/1.105773
5. C. Lavoie, F. M. d'Heurle, C. Detavernier, and C. Cabral, Jr., Microelectron. Eng. 0167-9317 70, 144 (2003). 10.1016/S0167-9317(03)00380-0
6. A. Dimoulas, A. Toriumi, and S. E. Mohney, MRS Bull. 0883-7694 34, 522 (2009).
7. M. Wittmer, M. -A. Nicolet, and J. W. Mayer, Thin Solid Films 0040-6090 42, 51 (1977). 10.1016/0040-6090(77)90077-3
8. Y. F. Hsieh, L. J. Chen, E. D. Marshall, and S. S. Lau, Thin Solid Films 0040-6090 162, 287 (1988). 10.1016/0040-6090(88)90217-9
9. F. Nemouchi, D. Mangelinck, C. Bergman, G. Clugnet, P. Gas, and J. L. Labar, Appl. Phys. Lett. 0003-6951 89, 131920 (2006). 10.1063/1.2358189 (Pubitemid 44484087)
10. L. J. Lin, K. L. Pey, W. K. Choi, E. A. Fitzgerald, D. A. Antoniadis, A. J. Pitera, M. L. Lee, D. Z. Chi, and C. H. Tung, Thin Solid Films 0040-6090 462-463, 151 (2004).
11. C. Perrin, D. Mangelinck, F. Nemouchi, J. Labar, C. Lavoie, C. Bergman, and P. Gas, Mater. Sci. Eng., B 0921-5107 154-155, 163 (2008). 10.1016/j.mseb.2008.09.042
12. Y. F. Hsieh, L. J. Chen, E. D. Marshall, and S. S. Lau, Mater. Res. Soc. Symp. Proc. 0272-9172 91, 467 (1987).
13. W. M. Weber, L. Geelhaar, E. Unger, C. Cheze, F. Kreupl, H. Riechert, and P. Lugli, Phys. Status Solidi B 0370-1972 244, 4170 (2007). 10.1002/pssb.200776198
14. Y. Wu, J. Xiang, C. Yang, W. Lu, and C. M. Lieber, Nature (London) 0028-0836 430, 61 (2004). 10.1038/nature02674 (Pubitemid 38915222)
15. N. S. Dellas, B. Z. Liu, S. M. Eichfeld, C. M. Eichfeld, T. S. Mayer, and S. E. Mohney, J. Appl. Phys. 0021-8979 105, 094309 (2009). 10.1063/1.3115453
16. T. Burchhart, A. Lugstein, Y. J. Hyun, G. Hochleitner, and E. Bertagnolli, Nano Lett. 1530-6984 9, 3739 (2009). 10.1021/nl9019243
17. P. Villars, L. D. Calvert, and W. B. Pearson, Pearson's Handbook of Crystallographic Data for Intermetallic Phases, 2nd ed. (American Society for Metals, Metals Park, OH, 1991), pp. 3739-3743.
18. M. Ellner, T. Godecke, and K. Schubert, J. Less-Common Met. 0022-5088 24, 23 (1971). 10.1016/0022-5088(71)90164-0
19. A-K. Larsson and R. Withers, J. Alloys Compd. 0925-8388 264, 125 (1998). 10.1016/S0925-8388(97)00254-5
20. E. D. Marshall, C. S. Wu, C. S. Pai, D. M. Scott, and S. S. Lau, Mater. Res. Soc. Symp. Proc. 0272-9172 47, 161 (1985).
21. Q. Zhang, N. Wu, T. Osipowicz, L. K. Bera, and C. Zhu, Jpn. J. Appl. Phys. 0021-4922 44, L1389 (2005). 10.1143/JJAP.44.L1389 (Pubitemid 43065101)
22. W. Hu, B. Liu, N. S. Dellas, S. M. Eichfeld, S. E. Mohney, J. M. Redwing, and T. S. Mayer, Proc. SPIE 0277-786X 7610, 76100V (2010). 10.1117/12.846766
23. F. A. Nichols and W. W. Mullins, J. Appl. Phys. 0021-8979 36, 1826 (1965). 10.1063/1.1714360
24. K. Sarpatwari, N. S. Dellas, O. O. Awadelkarim, and S. E. Mohney, Solid-State Electron. 0038-1101 54, 689 (2010). 10.1016/j.sse.2010.03.006