On the hydrogen sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)

Sensors and Actuators, B: Chemical

Volumn 165, Issue 1, 2012, Pages 19-23

  Hsu, Chi Shiang ^a   Chen, Huey Ing ^a   Chang, Chung Fu ^a   Chen, Tai You ^a   Huang, Chien Chang ^a   Chou, Po Cheng ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

HFET; Hydrogen sensor; Pd AlGaN GaN; Transient response

Indexed keywords

FAST TRANSIENT RESPONSE; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; HFET; HIGH-TEMPERATURE ELECTRONICS; HYDROGEN GAS; HYDROGEN SENSOR; HYDROGEN-SENSING; LOW CONCENTRATIONS; TEMPERATURE DEPENDENT; TRANSISTOR SWITCHING;

MEMS; TRANSIENT ANALYSIS;

HYDROGEN;

EID: 84862796334     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2012.01.059     Document Type: Article

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