On a GaN-based light-emitting diode with an indium-tin-oxide (ITO) direct-ohmic contact structure

IEEE Photonics Technology Letters

Volumn 23, Issue 15, 2011, Pages 1037-1039

  Liu, Yi Jung ^a   Huang, Chien Chang ^a   Chen, Tai You ^a   Hsu, Chi Shiang ^a   Tsai, Tsung Yuan ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

GaN; indium tin oxide (ITO); light emitting diodes (LEDs); Ohmic contact

Indexed keywords

CONTACT STRUCTURE; CURRENT SPREADING; GAN; GAN LAYERS; GAN-BASED LIGHT-EMITTING DIODES; INDIUM TIN OXIDE; LIGHT OUTPUT POWER; MG-DOPED; THERMAL-ANNEALING; TRANSPARENT FILMS;

DIODES; ELECTRIC CONTACTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; GOLD; INDIUM; LIGHT EMISSION; METALLIC COMPOUNDS; OHMIC CONTACTS; TIN;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 79960135392     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2150210     Document Type: Article

References (12)

1. X. Guo and E. F. Schubert, "Current crowding in GaN/InGaN light emitting diodes on insulating substrates," J. Appl. Phys., vol. 90, pp. 4191-4195, 2001. (Pubitemid 33598595)
2. L. Zhou, W. Lanford, A. T. Ping, and I. Adesida, "Low resistance Ti/Pt/Au ohmic contacts to p-type GaN," Appl. Phys. Lett., vol. 76, pp. 3451-3453, 2000.
3. Y. J. Liu, C. H. Yen, L. Y. Chen, T. H. Tsai, T. Y. Tsai, and W. C. Liu, "On a GaN-based light-emitting diode with a p-GaN/i-InGaN su-perlattice structure," IEEE Electron Device Lett., vol. 30, no. 11, pp. 1149-1151, Nov. 2009.
4. C. S. Chang, S. J. Chang, Y. K. Su, C. H. Kuo, W. C. Lai, Y. C. Lin, Y. P. Hsu, S. C. Shei, J. M. Tsai, H. M. Lo, J. C. Ke, and J. K. Sheu, "High brightness InGaN green LEDs with an ITO on n SPS upper contact," IEEE Trans. Electron Devices, vol. 50, no. 11, pp. 2208-2212, Nov. 2003.
5. T. Gessmann, Y. L. Li, E. L. Waldron, J. W. Graff, and J. K. Sheu, "Ohmic contacts to p-type GaN mediated by polarization fields in thin In Ga N capping layers," Appl. Phys. Lett., vol. 80, pp. 986-988, 2002.
6. S. K. Julita, G. Szymon, L. S. Elzbieta, P. Ryszard, N. Grzegorz, L. Michal, P. Piotr, T. Ewa, K. Jan, and K. Stanislaw, "Ni-Au contacts to p-type GaN - Structure and properties," Solid-State Electron., vol. 54, pp. 701-709, 2010.
7. J. L. Lee, M. Weber, J. K. Kim, J. W. Lee, Y. J. Park, T. Kim, and K. Lynn, "Ohmic contact formation mechanism of nonalloyed Pd contacts to p-type GaN observed by positron annihilation spectroscopy," Appl. Phys. Lett., vol. 74, pp. 2289-2291, 1999. (Pubitemid 129310422)
8. D. C. Look, D. C. Reynolds, U. W. Hemsky, J. R. Sizelove, R. L. Jones, and R. J. Molnar, "Defect donor and acceptor in GaN," Phys. Rev. Lett., vol. 79, pp. 2273-2276, 1997. (Pubitemid 127644898)
9. S. Nakahara and E. Kinsbron, "Room temperature interdiffusion study of Au/Ga thin film couples," Thin Solid Films, vol. 113, pp. 15-26, 1984. (Pubitemid 14572847)
10. M. Puselj and J. Schubert, Less-Common Met., vol. 38, pp. 83-90, 1974.
11. Y. Koide, T. Maeda, T. Kawakami, S. Fujita, T. Uemura, N. Shibata, and M. Murakami, "Effects of annealing in an oxygen ambient on elec trical properties of ohmic contacts to p-type GaN," J. Electron. Mater., vol. 28, pp. 341-346, 1999.
12. J. S. Jang, "High output power GaN-based light-emitting diodes using an electrically reverse-connected p-Schottky diode and p-InGaN-GaN superlattice," Appl. Phys. Lett., vol. 93, p. 081118, 2008.