Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF4 plasma treatment

IEEE Transactions on Electron Devices

Volumn 53, Issue 9, 2006, Pages 2223-2229

  Cai, Yong ^b   Cheng, Zhiqun ^b   Tang, Wilson Chak Wah ^b   Lau, Kei May ^a,b   Chen, Kevin J ^a,b  

^a IEEE   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlGaN GaN; Depletion mode (D mode); Direct coupled field effect transistor (FET) logic (DCFL); Enhancement mode (E mode); Enhancement depletion (E D) inverter; Fluorine ions; Gate current; HEMT; Plasma treatment; Post gate rapid thermal annealing (RTA)

Indexed keywords

DEPLETION MODE (D-MODE); DIRECT COUPLED FIELD EFFECT TRANSISTOR (FET) LOGIC (DCFL); ENHANCEMENT MODE (E-MODE); ENHANCEMENT/DEPLETION (E/D) INVERTERS; FLUORINE IONS; GATE CURRENT; PLASMA TREATMENT; POST-GATE RAPID THERMAL ANNEALING (RTA);

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; MONOLITHIC INTEGRATED CIRCUITS; OSCILLATORS (ELECTRONIC); RAPID THERMAL ANNEALING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33947146088     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.881002     Document Type: Article

References (16)

1. I. Daumiller, C. Kirchner, M. Kamp, K. J. Ebeling, and E. Kohn, "Evaluation of the temperature stability of AlGaN/GaN heterostructure FET's," IEEE Electron Device Lett., vol. 20, no. 9, pp. 448-450, Sep. 1999.
2. P. G. Neudeck, R. S. Okojie, and L.-Y. Chen, "High-temperature electronics - A role for wide bandgap semiconductors?" Proc. IEEE, pp. 1065-1076, vol. 90, no. 6, Jun. 2002.
3. T. Egawa, G. Y. Zhao, H. Ishikawa, M. Umeno, and T. Jimbo, "Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire," IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 603-608, Mar. 2003.
4. R. Kirschman Ed., High Temperature Electronics, New York: IEEE Press, 1999.
5. S. Long and S. E. Butner, Gallium Arsenide Digital Integrated Circuit Design. New York: McGraw-Hill, 1990.
6. Y. F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh, "30-W/mm GaN HEMTs by field plate optimization," IEEE Electron Device Lett., vol. 25, no. 3, pp. 117-119, Mar. 2004.
7. M. Kanamura, T. Kikkawa, T. Iwai, K. Imanishi, T. Kubo, and K. Joshin, "An over 100 W n-GaN/n-AlGaN/GaN MIS-HEMT power amplifier for wireless base station applications," in IEDM Tech. Dig., Washington, DC, Dec. 4-7, 2005, pp. 572-575.
8. J. S. Moon, D. Wang, T. Hussain, M. Mocovic, P. Deelman, M. Hu, M. Antcliffe, C. Ngo, P. Hashimoto, and L. McCray, "Submicron enhancement-mode AlGaN/GaN HEMTs," in Proc. 60th Device Research Conf. Dig., Santa Barbara, CA, 2002, pp. 23-25.
9. T. Hussain, M. Micovic, T. Tsen, M. Delaney, D. Chow, A. Schmitz, P. Hashimoto, D. Wong, J. S. Moon, M. Hu, J. Duvall, and D. McLaughlin, "GaN HFET digital circuit technology for harsh environments," Electron. Lett., vol. 39, no. 24, pp. 1708-1709, Nov. 2003.
10. W. B. Lanford, T. Tanaka, Y. Otoki, and I. Adesida, "Recessed-gate enhancement-mode GaN HEMT with high threshold voltage," Electron. Lett., vol. 41, no. 7, pp. 449-450, Mar. 2005.
11. Y. Cai, Y. G. Zhou, K. J. Chen, and K. M. Lau, "High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment," IEEE Electron Device Lett., vol. 26, no. 7, pp. 435-437, Jul. 2005.
12. M. Micovic, T. Tsen, M. Hu, P. Hashimoto, P. J. Willadsen, I. Milosavljevic, A. Schmitz, M. Antcliffe, D. Zhender, J. S. Moon, W. S. Wong, and D. Chow, "GaN enhancement/depletion-mode FET logic for mixed signal applications," Electron. Lett., vol. 41, no. 19, pp. 1081-1083, Sep. 2005.
13. Y. Cai, Z. Cheng, C. W. Tang, K. J. Chen, and K. M. Lau, "Monolithic integration of enhancement-and depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits," in IEDM Tech. Dig., Washington, DC, Dec. 4-7, 2005.
14. Y. Cai, Y. G. Zhou, K. J. Chen, and K. M. Lau, "Threshold voltage Control of AlGaN/GaN HEMTs by CF4 plasma treatment," in Proc. 47th EMC, Santa Barbara, CA, Jun. 2005.
15. A. A. Ketterson and H. Morkoc, "GaAs/AlGaAs and InGaAs/AlGaAs MODFET inverter simulations," IEEE Trans. Electron Devices, vol. ED-33, no. 11, pp. 1626-1634, 1986.
16. A. Mahajan, G. Cueva, M. Arafa, P. Fay, and I. Adesida, "Fabrication and characterization of an InAlAs/InGaAs/InP ring oscillator using integrated enhancement-and depletion-mode high-electron mobility transistors," IEEE Electron Device Lett., vol. 18, no. 8, pp. 391-393, Aug. 1997.