Comprehensive investigation on planar type of Pd-GaN hydrogen sensors

International Journal of Hydrogen Energy

Volumn 34, Issue 13, 2009, Pages 5604-5615

  Chiu, Shao Yen ^a   Huang, Hsuan Wei ^a   Huang, Tze Hsuan ^a   Liang, Kun Chieh ^a   Liu, Kang Ping ^a   Tsai, Jung Hui ^b   Lour, Wen Shiung ^a  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b Department of Electronic Engineering   (Taiwan)

Author keywords

Dipole layer; GaN; Hydrogen sensor; Metal semiconductor; Pd

Indexed keywords

BARRIER HEIGHTS; BI-DIRECTIONAL; CONSTANT VOLTAGE; CURRENT TRANSIENTS; DETECTING LIMIT; DIPOLE LAYER; DYNAMIC MEASUREMENT; GAN; GAN METAL-SEMICONDUCTOR-METAL; HYDROGEN CONCENTRATION; HYDROGEN SENSOR; PD; RESPONSE TIME; SENSING CURRENTS; SENSING MECHANISM; SENSING RESPONSE; STATIC AND DYNAMIC; SWITCHING VOLTAGES; VOLTAGE TRANSIENT RESPONSE; VOLTAGE VARIATION;

ELECTRIC TRANSFORMERS; GALLIUM ALLOYS; GALLIUM NITRIDE; HYDROGEN; METALS; PALLADIUM; PHOTODETECTORS; SEMICONDUCTING GALLIUM; SENSORS; TRANSIENT ANALYSIS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 67649610966     PISSN: 03603199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijhydene.2009.04.073     Document Type: Review

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