Comprehensive study of a Pd/Al0.24Ga0.76As-based field-effect-transistor-type hydrogen sensor

Sensors and Actuators, B: Chemical

Volumn 133, Issue 1, 2008, Pages 128-134

  Tsai, Yan Ying ^a   Lin, Kun Wei ^b   Chen, Huey Ing ^a   Hung, Ching Wen ^a   Chen, Tzu Pin ^a   Tsai, Tsung Han ^a   Chen, Li Yang ^a   Chu, Kuei Yi ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHAOYANG UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

Field effect transistor; Hydrogen sensor; Pd AlGaAs; Transient response

Indexed keywords

EID: 46449124766     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2008.01.058     Document Type: Article

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