Comprehensive study of Pd/GaN metal-semiconductor-metal hydrogen sensors with symmetrically bi-directional sensing performance

Sensors and Actuators, B: Chemical

Volumn 138, Issue 2, 2009, Pages 422-427

  Chiu, Shao Yen ^a   Huang, Hsuan Wei ^a   Huang, Tze Hsuan ^a   Liang, Kun Chieh ^a   Liu, Kang Ping ^a   Tsai, Jung Hui ^b   Lour, Wen Shiung ^a  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b Department of Electronic Engineering   (Taiwan)

Author keywords

Barrier height variation; Catalytic metal; Dipole layer; Hydrogen sensor; Metal semiconductor metal; Sensitivity

Indexed keywords

BARRIER-HEIGHT VARIATION; CATALYTIC METAL; DIPOLE LAYER; HYDROGEN SENSOR; METAL-SEMICONDUCTOR-METAL; SENSITIVITY;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; HYDROGEN; METALS; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM; SENSITIVITY ANALYSIS;

SENSORS;

EID: 64549137619     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2009.03.005     Document Type: Article

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