Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor

IEEE Transactions on Electron Devices

Volumn 48, Issue 9, 2001, Pages 1938-1944

  Liu, Wen Chau ^a,b   Pan, Hsi Jen ^b   Chen, Huey Ing ^b   Lin, Kun Wei ^c   Cheng, Shiou Ying ^a,d   Yu, Kuo Hui ^b  

^a IEEE   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c CHIENKUO TECHNOLOGY UNIVERSITY   (Taiwan)

^d ORIENTAL INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Barrier height; Fermi level pinning; Hydrogen response; Hydrogen sensors; Schottky diode

Indexed keywords

BARRIER HEIGHT; HYDROGEN SENSITIVITY; HYDROGEN SENSOR; MOS SCHOTTKY DIODE;

ADSORPTION; CHEMICAL SENSORS; HYDROGEN; ISOTHERMS; LEAD; LOW TEMPERATURE OPERATIONS; MOS DEVICES; OXIDES; PARTIAL PRESSURE; REACTION KINETICS; SEMICONDUCTING INDIUM PHOSPHIDE; WATER;

SCHOTTKY BARRIER DIODES;

EID: 0035445385     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.944180     Document Type: Article

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