On a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor

Sensors and Actuators, B: Chemical

Volumn 139, Issue 2, 2009, Pages 310-316

  Tsai, Tsung Han ^a   Chen, Huey Ing ^a   Lin, Kun Wei ^b   Kuo, Yaw Wen ^c   Chiu, Po Shun ^a   Chang, Chung Fu ^a   Chen, Li Yang ^a   Chen, Tzu Pin ^a   Liu, Yi Jung ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHAOYANG UNIVERSITY OF TECHNOLOGY   (Taiwan)

^c NATIONAL CHI NAN UNIVERSITY   (Taiwan)

Author keywords

Hydrogen; InAlAs; MHEMT; Pd; Sensing response

Indexed keywords

ACTIVATION ENERGY E; APPLIED VOLTAGES; CURRENT SENSING; GATE BIAS VOLTAGE; HYDROGEN ADSORPTION; HYDROGEN CONCENTRATION; HYDROGEN SENSING PROPERTIES; HYDROGEN SENSOR; INALAS; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; MHEMT; PD; RECTIFICATION RATIO; RESPONSE RATE; SENSING RESPONSE; STICKING COEFFICIENTS; TEMPERATURE BEHAVIOR; THRESHOLD VOLTAGE SHIFTS;

ACTIVATION ENERGY; CHEMICAL SENSORS; DRAIN CURRENT; ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; HYDROGEN; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PALLADIUM; RESONANT TUNNELING; SURVEYS; THRESHOLD VOLTAGE;

GAS ADSORPTION;

EID: 66349134138     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2009.03.042     Document Type: Article

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