Hydrogen sensing properties of a Pd/SiO2/AlGaN-based MOS diode

Electrochemistry Communications

Volumn 11, Issue 1, 2009, Pages 65-67

  Chang, Chung Fu ^a   Tsai, Tsung Han ^a   Chen, Huey Ing ^a   Lin, Kun Wei ^b   Chen, Tzu Pin ^a   Chen, Li Yang ^a   Liu, Yi Chun ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHAOYANG UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

AlGaN; Hydrogen; Pd; Schottky diode; SiO2

Indexed keywords

CHEMICAL SENSORS; ELECTRIC FIELDS; HYDROGEN; NONMETALS; PALLADIUM; REACTION RATES; SCHOTTKY BARRIER DIODES; SENSORS; SILICON COMPOUNDS;

ALGAN; HYDROGEN SENSING PROPERTIES; KINETIC ANALYSES; MOS DIODES; PD; POLARIZATION EFFECTS; ROOM TEMPERATURES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODE; SENSING DEVICES; SHORT RESPONSE TIMES; SIO2; TEMPERATURE OPERATIONS;

DIODES;

EID: 57749175986     PISSN: 13882481     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elecom.2008.10.031     Document Type: Article

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