High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2

Semiconductor Science and Technology

Volumn 24, Issue 4, 2009, Pages

  Chiu, Shao Yen ^a   Huang, Hsuan Wei ^a   Liang, Kun Chieh ^a   Huang, Tze Hsuan ^a   Liu, Kang Ping ^a   Tsai, Jung Hui ^b   Lour, Wen Shiung ^a  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b Department of Electronic Engineering   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENT DISSOCIATION; ENHANCED CATALYTIC ACTIVITY; HYDROGEN MOLECULE; HYDROGEN SENSOR; LOW POWER SENSOR; METAL SEMICONDUCTOR METAL; SCHOTTKY BARRIER HEIGHTS; SENSING CHARACTERISTICS; SENSING RESPONSE; SWITCHING VOLTAGES;

ELECTRIC POTENTIAL; HYDROGEN; MIXTURES; PALLADIUM; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; SENSORS; SILICON COMPOUNDS;

DYNAMIC RESPONSE;

EID: 68849131415     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/4/045007     Document Type: Article

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