Comprehensive study of pseudomorphic high electron mobility transistor (pHEMT)-based hydrogen sensor

Sensors and Actuators, B: Chemical

Volumn 119, Issue 1, 2006, Pages 47-51

  Lin, Kun Wei ^a   Chang, Rui Hsien ^a  

^a CHIENKUO TECHNOLOGY UNIVERSITY   (Taiwan)

Author keywords

AlGaAs; Hydrogen sensor; Off state breakdown; pHEMT

Indexed keywords

BAND STRUCTURE; BANDWIDTH; CURRENT DENSITY; ELECTRIC CURRENTS; INTEGRATED CIRCUIT LAYOUT; SCHOTTKY BARRIER DIODES; THRESHOLD VOLTAGE; TRANSISTORS;

ALGAAS; HYDROGEN SENSOR; OFF-STATE BREAKDOWN; PHEMT;

CHEMICAL SENSORS;

EID: 33748305638     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2005.11.049     Document Type: Article

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