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Volumn 134, Issue 2, 2008, Pages 750-754

Transient response of a transistor-based hydrogen sensor

Author keywords

Desorption; Hydrogen sensor; Oxygen; Transient response; Transistor type

Indexed keywords

FIELD EFFECT TRANSISTORS; MOSFET DEVICES; PALLADIUM;

EID: 51649122417     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2008.06.034     Document Type: Article
Times cited : (15)

References (15)
  • 2
    • 0037911450 scopus 로고    scopus 로고
    • A Comprehensive study of adsorption kinetics for hydrogen-sensing with an electroless-plated Pd-InP Schottky diode
    • Chen H.I., Chou Y.I., and Hsiung C.K. A Comprehensive study of adsorption kinetics for hydrogen-sensing with an electroless-plated Pd-InP Schottky diode. Sens. Actuators B 92 (2003) 6-16
    • (2003) Sens. Actuators B , vol.92 , pp. 6-16
    • Chen, H.I.1    Chou, Y.I.2    Hsiung, C.K.3
  • 3
    • 0034515123 scopus 로고    scopus 로고
    • Sensing properties of palladium-gate MOS (Pd-MOS) hydrogen sensor-based on plasmagrown silicon dioxide
    • Dwivedi D., Dwivedi R., and Srivastava S.K. Sensing properties of palladium-gate MOS (Pd-MOS) hydrogen sensor-based on plasmagrown silicon dioxide. Sens. Actuators B 71 (2000) 161-168
    • (2000) Sens. Actuators B , vol.71 , pp. 161-168
    • Dwivedi, D.1    Dwivedi, R.2    Srivastava, S.K.3
  • 8
    • 0001041702 scopus 로고
    • Kinetics of hydrogen absorption by Pd (110)
    • Kay B.D., Peden C.H.F., and Goodman D.W. Kinetics of hydrogen absorption by Pd (110). Phys. Rev. B 34 (1986) 817-822
    • (1986) Phys. Rev. B , vol.34 , pp. 817-822
    • Kay, B.D.1    Peden, C.H.F.2    Goodman, D.W.3
  • 11
    • 0000235794 scopus 로고
    • Reversible hydrogen annealing of metal-oxide-silicon carbide devices at high temperatures
    • Baranzahi A., Lloyd Spetz A., and Lundström I. Reversible hydrogen annealing of metal-oxide-silicon carbide devices at high temperatures. Appl. Phys. Lett. 67 (1995) 3203-3205
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 3203-3205
    • Baranzahi, A.1    Lloyd Spetz, A.2    Lundström, I.3
  • 12
    • 0030127549 scopus 로고    scopus 로고
    • 2 reaction on Pd and of its influence on the hydrogen response of a hydrogen sensitive Pd metal-oxide-semiconductor device
    • 2 reaction on Pd and of its influence on the hydrogen response of a hydrogen sensitive Pd metal-oxide-semiconductor device. Surf. Sci. 350 (1996) 91-102
    • (1996) Surf. Sci. , vol.350 , pp. 91-102
    • Fogelberg, J.1    Petersson, L.G.2
  • 13
    • 23044473295 scopus 로고    scopus 로고
    • Hydrogen interaction with platinum and palladium metal-insulator-semiconductor devices
    • Art. No. 014505
    • Salomonsson A., Eriksson M., and Dannetun H. Hydrogen interaction with platinum and palladium metal-insulator-semiconductor devices. J. Appl. Phys. 98 (2005) Art. No. 014505
    • (2005) J. Appl. Phys. , vol.98
    • Salomonsson, A.1    Eriksson, M.2    Dannetun, H.3
  • 14
    • 0242489213 scopus 로고    scopus 로고
    • The response of palladium metal-insulator-semiconductor devices to hydrogen-oxygen mixtures: comparison between kinetic models and experiment
    • Medlin J.W., Lutz A.E., Bastasz R., and McDaniel A.H. The response of palladium metal-insulator-semiconductor devices to hydrogen-oxygen mixtures: comparison between kinetic models and experiment. Sens. Actuators B 96 (2003) 290-297
    • (2003) Sens. Actuators B , vol.96 , pp. 290-297
    • Medlin, J.W.1    Lutz, A.E.2    Bastasz, R.3    McDaniel, A.H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.