A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT)

Microelectronics Reliability

Volumn 50, Issue 5, 2010, Pages 734-737

  Tsai, Tsung Han ^a   Chen, Huey Ing ^a   Lin, Kun Wei ^a,b   Chen, Tai You ^a   Huang, Chien Chang ^a   Hsu, Kai Siang ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHAOYANG UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE-SOURCE VOLTAGE; HYDROGEN SENSOR; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; POWER CONSUMPTION; SENSING RESPONSE; SENSOR PERFORMANCE;

DRAIN CURRENT; ELECTRON MOBILITY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SENSORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77953134829     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.01.009     Document Type: Article

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