Thermal effects in AlGaN/GaN/Si high electron mobility transistors

Solid-State Electronics

Volumn 61, Issue 1, 2011, Pages 1-6

  Saidi, I ^a   Cordier, Y ^b   Chmielowska, M ^b   Mejri, H ^a,c   Maaref, H ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b CRHEA CNRS   (France)

^c Ecole Preparatoire aux Academies Militaires   (Tunisia)

Author keywords

AlGaN GaN Si HEMTs; Direct current characteristics; Self heating; Two dimensional electron gas

Indexed keywords

ACTIVE ZONE; ALGAN/GAN; ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ALGAN/GAN/SI HEMTS; BAND PARAMETERS; CONDUCTIVE CHANNELS; DIRECT-CURRENT; DIRECT-CURRENT CHARACTERISTICS; DRAIN VOLTAGE; ELECTRODE SIZE; ELECTRON TRANSPORT; GROUP III; HETEROSTRUCTURES; HIGH TEMPERATURE TRANSISTORS; HIGH-POWER; PROCESS TECHNOLOGIES; SELF-HEATING; SI (1 1 1); SIC SUBSTRATES; SPONTANEOUS POLARIZATIONS; TEMPERATURE RISE;

CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDE; HEATING; SILICON CARBIDE; SUBSTRATES; TRANSISTORS; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79955615255     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.02.008     Document Type: Review

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