ZnO-based ultra-violet light emitting diodes and nanostructures fabricated by atomic layer deposition

Semiconductor Science and Technology

Volumn 27, Issue 7, 2012, Pages

  Chen, Miin Jang ^a,b   Yang, Jer Ren ^a   Shiojiri, Makoto ^c,d  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^d NONE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC LAYER DEPOSITION; FABRICATION; HETEROJUNCTIONS; LIGHT EMITTING DIODES; METALLIC FILMS; NANODOTS; NANOPILLARS; OPTICAL DATA PROCESSING; OXIDE MINERALS; PHOTONIC DEVICES; SAPPHIRE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; SILICA; SILICON; SUBSTRATES; ZINC OXIDE;

AL-DOPED ZNO FILMS; AMORPHOUS SILICA; ANALYTICAL ELECTRON MICROSCOPY; ELECTRO-OPTICAL MEASUREMENTS; SAPPHIRE SUBSTRATES; ULTRA-VIOLET LIGHT; ZNO NANOPILLARS; ZNO QUANTUM DOTS;

II-VI SEMICONDUCTORS;

EID: 84862746507     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/7/074005     Document Type: Article

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