ZnO quantum dots embedded in a SiO2 nanoparticle layer grown by atomic layer deposition

Physica Status Solidi - Rapid Research Letters

Volumn 3, Issue 2-3, 2009, Pages 88-90

  Wu, M K ^a   Shih, Y T ^a   Chen, M J ^a   Yang, J R ^a   Shiojiri, M ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; FABRICATION ROUTES; HIGH TEMPERATURE; ISOPROPYL ALCOHOLS; NANOPARTICLE LAYERS; PHOTOLUMINESCENCE SPECTRUM; POST DEPOSITION ANNEALING; QUANTUM CONFINEMENT EFFECTS; ROOM TEMPERATURE; SI SUBSTRATES; SPIN-ON; UV LIGHT EMITTING DIODE; ZNO; ZNO QUANTUM DOTS;

AMORPHOUS SILICON; ATOMIC LAYER DEPOSITION; LIGHT EMITTING DIODES; NANOPARTICLES; SEMICONDUCTING ZINC COMPOUNDS; SILICON COMPOUNDS; SILICON OXIDES; ZINC; ZINC OXIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 71149094088     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200802281     Document Type: Article

References (13)

1. L. Guo et al., Appl. Phys. Lett. 76, 2901 (2000).
2. B. Gil and A. V. Kavokin, Appl. Phys. Lett. 81, 748 (2002).
3. K. F. Lin et al., Appl. Phys. Lett. 88, 263117 (2006).
4. H. M. Cheng et al., Appl. Phys. Lett. 88, 261909 (2006).
5. S. W. Kim et al., Appl. Phys. Lett. 81, 5036 (2002).
6. K. K. Kim et al., Appl. Phys. Lett. 84, 3810 (2004).
7. X. H. Zhang et al., Appl. Phys. Lett. 88, 21903 (2006).
8. M. Ritala and M. Leskela, Nanotechnology 10, 19 (1999).
9. L. Niinistö et al., Phys. Status Solidi A 201, 1443 (2004).
10. A. Wojcik et al., J. Cryst. Growth 310, 284 (2008).
11. M. K. Wu et al., IEEE Photonics Technol. Lett. 20, 1772 (2008).
12. Y. Chen et al., Mater. Sci. Eng. B 75, 190 (2000).
13. S. T. Tan et al., J. Cryst. Growth 290, 518 (2006).