Structure and stimulated emission of a high-quality zinc oxide epilayer grown by atomic layer deposition on the sapphire substrate

Thin Solid Films

Volumn 519, Issue 1, 2010, Pages 536-540

  Chen, H C ^a   Chen, M J ^a   Liu, T C ^a   Yang, J R ^a   Shiojiri, M ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Atomic layer deposition; Epilayer; Stimulated emission; Threading dislocation; Transmission electron microscopy; Wide band gap semiconductor; X ray diffraction; Zinc oxide

Indexed keywords

COLUMNAR STRUCTURES; CRYSTALLINE QUALITY; HIGH QUALITY; HIGH TEMPERATURE; LAYER-BY-LAYER GROWTH; LOW DEPOSITION TEMPERATURE; LOW THRESHOLDS; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; THREADING DISLOCATION; THREADING DISLOCATION DENSITIES; TRANSMISSION ELECTRON; WIDE-BAND-GAP SEMICONDUCTOR; ZNO; ZNO LAYERS;

ATOMIC LAYER DEPOSITION; ATOMS; DEPOSITION; DIFFRACTION; ENERGY GAP; EPILAYERS; EPITAXIAL GROWTH; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SAPPHIRE; SEMICONDUCTOR GROWTH; STIMULATED EMISSION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC;

ZINC OXIDE;

EID: 77957713379     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.07.069     Document Type: Article

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