SCOPUS 정보 검색 플랫폼

ECS Transactions

Volumn 33, Issue 2, 2010, Pages 267-275

The structure and ultraviolet electroluminescence of n-ZnO-SiO 2-ZnO nanocomposite/p-GaN heterojunction LED

(5) Tsai, H L a Li, W C a Chen, M J a Shiojiri, M b Yang, J R a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b KYOTO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ELECTROLUMINESCENCE; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; IMPACT IONIZATION; LIGHT; LIGHT EMITTING DIODES; NANOCOMPOSITES; OXIDE MINERALS; REFRACTIVE INDEX; SAPPHIRE; SILICA; SILICON; ZINC; ZINC METALLOGRAPHY; ZINC OXIDE; ZNO NANOPARTICLES;

C-PLANE SAPPHIRE SUBSTRATES; CURRENT BLOCKING LAYERS; LIGHT-EXTRACTION EFFICIENCY; LOW REFRACTIVE INDEX; NANO-COMPOSITE LAYERS; NON-UNIFORM DISTRIBUTION; ULTRAVIOLET ELECTROLUMINESCENCE; ULTRAVIOLET LIGHTS;

SIO2 NANOPARTICLES;

EID: 79952561080 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.3485264 Document Type: Conference Paper

Times cited : (2)

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