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Journal of the Electrochemical Society

Volumn 158, Issue 5, 2011, Pages

P-type ZnO:P films fabricated by atomic layer deposition and thermal processing

(5) Shih, Y T a Chien, J F a Chen, M J a Yang, J R a Shiojiri, M b

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b KYOTO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR STATE; AMORPHOUS SILICA; GOOD OPTICAL QUALITY; LOW TEMPERATURE PHOTOLUMINESCENCE; P TYPE ZNO; P-TYPE; P-TYPE CONDUCTIVITY; PHOSPHORUS-DOPED; POST-DEPOSITION; ROOM TEMPERATURE; SPECTRAL PEAK; SPIN-ON DOPANT; THERMAL PROCESSING; THERMAL TREATMENT; ZNO;

AMORPHOUS FILMS; ATOMIC LAYER DEPOSITION; DOPING (ADDITIVES); HOLE CONCENTRATION; PHOSPHORUS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON OXIDES; SILICON WAFERS;

ZINC OXIDE;

EID: 79953206625 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3567019 Document Type: Article

Times cited : (15)

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