Structural investigation of n-ZnO/p-GaN ultraviolet light-emitting diodes grown by atomic layer deposition

Functional Materials Letters

Volumn 4, Issue 3, 2011, Pages 221-224

  Li, W C ^a   Tsai, H L ^a   Chen, H C ^a   Wu, M K ^a   Chen, H R ^a   Chen, M J ^a   Yang, J R ^a   Shiojiri, M ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

analytical scanning transmission electron microscopy; atomic layer deposition; Ultra violet LED; zinc oxide

Indexed keywords

ATOMIC PERCENT; HIGH QUALITY; INTERFACIAL LAYER; P-TYPE GAN; STRUCTURAL INVESTIGATION; THREADING DISLOCATION; TRANSMISSION MICROSCOPY; ULTRA-VIOLET; ULTRAVIOLET LIGHT-EMITTING DIODES; ZNO; ZNO CRYSTALS;

ATOMIC LAYER DEPOSITION; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; LIGHT EMITTING DIODES; RAPID THERMAL ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

GALLIUM NITRIDE;

EID: 84861349563     PISSN: 17936047     EISSN: 17937213     Source Type: Journal    
DOI: 10.1142/S1793604711002044     Document Type: Article

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