SCOPUS 정보 검색 플랫폼

Volumn 157, Issue 9, 2010, Pages

Stimulated emission in highly (0001)-oriented ZnO films grown by atomic layer deposition on the amorphous glass substrates

(6) Shih, Y T a Chiu, C Y a Chang, C W a Yang, J R a Shiojiri, M b Chen, M J a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b KYOTO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALKALINE EARTH; ALUMINOSILICATE GLASS; AMORPHOUS GLASS; CRYSTAL QUALITIES; DEFECT-RELATED BANDS; HIGH TEMPERATURE; LOW TEMPERATURES; NEAR BAND EDGE; OPTICALLY PUMPED; POST-DEPOSITION; PREFERRED ORIENTATIONS; ROOM TEMPERATURE; THRESHOLD INTENSITY; ZNO; ZNO FILMS;

ALKALINE EARTH METALS; ALUMINOSILICATES; ATOMIC LAYER DEPOSITION; BUFFER LAYERS; GLASS; METALLIC FILMS; OXIDE FILMS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; STIMULATED EMISSION; SUBSTRATES; ZINC; ZINC OXIDE;

AMORPHOUS FILMS;

EID: 77955826799 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3463723 Document Type: Article

Times cited : (9)

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